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Multi-crucible half-continuous silicon carbide crystal growth device

A technology of crucible silicon carbide and crystal growth, which is applied in the directions of crystal growth, polycrystalline material growth, single crystal growth, etc. It can solve the problems of affecting the quality of growing crystals, precise control of temperature, and large energy consumption, so as to improve production efficiency and save energy. Energy consumption and the effect of ensuring the growth environment

Pending Publication Date: 2019-10-18
江苏星特亮科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The growth device with this structure consumes a lot of energy, and cannot accurately control the temperature of each crucible independently, which affects the quality of the crystal growth

Method used

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  • Multi-crucible half-continuous silicon carbide crystal growth device
  • Multi-crucible half-continuous silicon carbide crystal growth device
  • Multi-crucible half-continuous silicon carbide crystal growth device

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Embodiment Construction

[0024] The technical scheme of the present invention will be further explained below in conjunction with the drawings.

[0025] See Figure 1-3 As shown, the above-mentioned multi-crucible semi-continuous silicon carbide crystal growth device includes a first body having a first cavity 1, a carrier 2 arranged in the first cavity 1 for carrying a plurality of crucibles 12 A first driving mechanism 11 in the first cavity for driving the carrier 2 to move. The carrier 2 can be a turntable or a conveyor chain or a translation plate. A plurality of crucibles 12 are arranged on the carrier 2 at even intervals, and the first driving mechanism 11 is used to sequentially transport the plurality of crucibles 12 to the first position, namely figure 1 A in the middle. The above-mentioned multi-crucible semi-continuous silicon carbide crystal growth device also includes a warehouse door 8 arranged on the first body, and an observation window 9 arranged on the warehouse door 8. The warehouse...

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Abstract

The invention discloses a multi-crucible half-continuous silicon carbide crystal growth device which comprises a first main body, a second main body, a heating mechanism, a vacuuming mechanism, a carrier, a first driving mechanism and a second driving mechanism, wherein a first cavity is formed in the first main body; a second cavity communicating with the first cavity is formed in the second mainbody; the heating mechanism is used for heating the second cavity; the vacuuming mechanism is used for vacuuming the first cavity and / or the second cavity; the carrier is arranged in the first cavityand is used for holding multiple crucibles; the first driving mechanism is arranged in the first cavity and is used for driving the carrier to move; the second driving mechanism is used for driving the crucibles to move into and outside the second cavity one by one; the first driving mechanism is used for driving the carrier to make intermittent movement to convey the multiple crucibles to a first position aligned to a communicating part of the first cavity and the second cavity; and the second driving mechanism is used for driving a crucible in the first position to move into and outside thesecond cavity when the carrier stops moving. By adopting the growth device disclosed by the invention, the growth process time of a crystal is shortened, the production efficiency is improved, the energy consumption is reduced, and growth of high-quality crystals can be facilitated.

Description

Technical field [0001] The invention relates to a multi-crucible semi-continuous silicon carbide crystal growth device. Background technique [0002] The physical vapor transport method (PVT method) is the main technical method for the growth of silicon carbide single crystals. This method is to pack the silicon carbide polycrystalline raw material on the bottom of the cylindrical graphite crucible body, and cover the graphite crucible body with a graphite crucible lid to form In a closed space, silicon carbide seed crystals are installed on the lower surface of the graphite crucible cover. By heating the system consisting of the graphite crucible body and the graphite crucible cover, the silicon carbide polycrystalline raw material in the graphite crucible body is sublimated and the silicon carbide polycrystalline is maintained There is a suitable temperature gradient between the raw material and the silicon carbide seed crystal, and the sublimated silicon carbide particles will...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00
Inventor 李留臣周正星
Owner 江苏星特亮科技有限公司
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