A resistive memory

Abstract

The invention discloses a resistive variable memory. The resistive variable memory provided by the invention includes: bottom electrodes, MgO nanowires, carbon nanotube electrodes and top electrodes. Among them, a plurality of MgO nanowires are located on the upper surface of the bottom electrode, and the top of each MgO nanowire is in direct contact with the bottom end of a carbon nanotube to form a heterojunction contact; the top of each carbon nanotube electrode is in contact with the top electrode. . The invention uses the effect of the heterojunction contact on the current characteristics to suppress the leakage current, increase the resistance value in the high-resistance state, increase the conduction current, and enhance the ratio of high and low resistance values, thereby reducing the power consumption of the resistive variable memory. At the same time, the resistive layer of the resistive variable memory is composed of a plurality of MgO nanowires, which confine the conductive path in the nanowires, making it difficult to diverge and derive in space. Therefore, the formed conductive path is shorter, which further reduces the characteristic parameters of RRAM. Divergence is conducive to further reducing the size of the memory.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a resistive variable memory. Background technique [0002] With the development of portable mobile terminals, the demand for high-density and low-cost storage continues to increase. However, after extensive research, the inventors found that in the existing resistive random access memory (RRAM), the conduction path derivation and distribution in the thin film resistive layer are highly random, resulting in large leakage current and large dispersion of resistive variable parameters. , becoming the main bottleneck affecting the further reduction in size and power consumption of RRAM. Contents of the invention [0003] The object of the present invention is to provide a resistive variable memory, which has the advantages of low power consumption and small size. [0004] To achieve the above object, the present invention provides the following scheme: [0005] A resistive variable ...

AI Technical Summary

Problems solved by technology

However, after extensive research, the inventors found that in the existing resistive random access memory (RRAM), the conduction path derivation and distribution in the thin film resistive layer are highly random, resulting in large leakage current and large dispersion of resistive variable parameters. , has become the main bottleneck affecting the further reduction in size and power consumption of RRAM

Images