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Quantum dot light-emitting diode and preparation method

A quantum dot light-emitting and diode technology, which is used in semiconductor/solid-state device manufacturing, electrical components, and electrical solid-state devices, etc., and can solve the problem that the luminous efficiency of the device is not very high.

Pending Publication Date: 2019-10-22
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a quantum dot light emitting diode and a preparation method to solve the problem that in the current quantum dot light emitting diode in the prior art, the carriers cannot be well confined in the light emitting layer, and there are devices The luminous efficiency is not a very high technical problem

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  • Quantum dot light-emitting diode and preparation method
  • Quantum dot light-emitting diode and preparation method
  • Quantum dot light-emitting diode and preparation method

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Embodiment 1

[0033] The embodiment of the present invention provides a schematic structural diagram of a quantum dot light-emitting diode, such as figure 1 As shown, the quantum dot light-emitting diode includes: a substrate 1; an anode 2 formed on the substrate 1; a hole transport layer 3 formed on the anode 2; a multiple quantum well layer 4 formed on the hole transport layer 3, and multiple The quantum well layer 4 comprises at least two layers of barrier layers 41 and a light-emitting layer 42 less than the number of layers of the barrier layer 41. The barrier layer 41 and the light-emitting layer 42 are stacked at intervals, and the hole transport layer 3 is next to the barrier layer. 41 ; the electron transport layer 5 formed in the multi-quantum well layer 4 , adjacent to the barrier layer 41 in the multi-quantum well layer 4 ; the cathode 6 formed on the electron transport layer 5 .

[0034] It should be noted, figure 1 In the schematic structural diagram of the quantum dot light-...

Embodiment 2

[0047] On the basis of the above-mentioned embodiments, the embodiments of the present invention provide a method for preparing a quantum dot light-emitting diode, to figure 1 The quantum dot light-emitting diode shown is taken as an example for illustration, and the preparation method of the quantum dot light-emitting diode can be found in image 3 , including the following steps:

[0048] Step 110, providing a substrate.

[0049] see figure 1 , providing base 1.

[0050]Step 120, forming an anode on the substrate.

[0051] see figure 1 , forming an anode 2 on a substrate 1 .

[0052] Step 130, forming a hole transport layer on the anode.

[0053] In view figure 1 , forming a hole transport layer 3 on the anode 2 .

[0054] Step 140, forming a multi-quantum well layer on the hole transport layer, the multi-quantum well layer includes at least two barrier layers and a light-emitting layer one less than the number of barrier layers, and the barrier layer and the light-e...

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Abstract

The embodiment of the invention discloses a quantum dot light-emitting diode and a preparation method. The quantum dot light-emitting diode comprises a substrate; an anode formed on the substrate; a hole transport layer formed on the anode; a multi-quantum well layer which is formed on the hole transport layer and comprises at least two barrier layers and light-emitting layers, wherein the numberof the light-emitting layers is one less than that of the barrier layers, the barrier layers and the light-emitting layers are stacked at intervals, and the hole transport layer is adjacent to the barrier layers; an electron transport layer which is formed on the multi-quantum well layer and is adjacent to the barrier layers in the multi-quantum well layer; and a cathode formed on the electron transport layer. According to the technical scheme provided by the embodiment of the invention, carriers are better limited in the light-emitting layer through the barrier layers for composite light emission, so that the light-emitting efficiency of the quantum dot light-emitting diode is improved.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of semiconductors, in particular to a quantum dot light-emitting diode and a preparation method. Background technique [0002] Quantum dots are a new type of luminescent material, which has the advantages of adjustable spectrum, low cost, and large-scale preparation. [0003] For quantum dot light-emitting diodes, it is necessary to confine the carriers (holes, electrons) to recombine in the light-emitting layer, and although the current device structure can confine them to a certain extent, the carriers still pass through. Therefore, in the current quantum dot light-emitting diode, the carriers cannot be well confined in the light-emitting layer, and there is a technical problem that the light-emitting efficiency of the device is not very high. Contents of the invention [0004] In view of this, the embodiment of the present invention provides a quantum dot light emitting diode ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 王恺孙小卫郑凡凯李晨昊刘皓宸
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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