A measurement delay method, device and calibration equipment for calibrating an oscilloscope channel
An oscilloscope and channel technology, applied in measurement devices, measuring electrical variables, instruments, etc., can solve the problems of inaccurate calibration results and high calibration costs, and achieve the effect of reducing costs
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Embodiment 1
[0043] An embodiment of the present invention provides a measurement delay method for calibrating an oscilloscope channel, such as figure 1 shown, including the following steps:
[0044] Step S1: Obtain a switching dynamic waveform diagram for measuring the switching characteristics of the power semiconductor device under test. The power semiconductor device to be tested in this embodiment may be an insulated gate bipolar transistor (IGBT) or a semiconductor field effect transistor (MOSFET). The material of the power semiconductor device to be tested in this embodiment is preferably silicon carbide. The switching characteristics mentioned above are the switching loss characteristics of the power semiconductor device to be tested, and of course other switching characteristics can also be used.
[0045] The switching loss characteristics mentioned above are the losses that need to be reduced as much as possible during the working process of the power semiconductor device to be ...
Embodiment 2
[0073] An embodiment of the present invention provides a measurement delay method for calibrating an oscilloscope channel, which can also be applied to another equivalent test circuit. The method in Embodiment 1 figure 2 It is under ideal conditions, but in most applications, there will be parasitic parameters in the DC busbar and lines, especially in the case of small turn-on / off time, the influence of parasitic parameters cannot be ignored, it will be in the turn-on Oscillation occurs during shutdown. Such as Figure 6 As shown, it is a specific situation in which the measurement delay is adjusted in consideration of parasitic parameters in this embodiment. Figure 6 In order to consider the actual double-pulse model influenced by parasitic parameters, Lbus is the parasitic inductance of the DC busbar, Lin is the parasitic inductance inside the module, LG is the parasitic inductance of the drive circuit, Cpar is the parasitic capacitance of the load inductance and the junc...
Embodiment 3
[0078] An embodiment of the present invention provides a measurement delay method for calibrating oscilloscope channels, which can also be applied to the situation where multiple channels of an oscilloscope are used to measure multiple electrical parameters at the same time, for example: the multiple electrical parameters are respectively the first electrical parameter to be measured is M1, the second electrical parameter to be measured is M2, and the third electrical parameter to be measured is M3. Based on the measurement delay method of calibrating the oscilloscope channel in Embodiment 1, after the measurement delay of the power semiconductor device to be tested is calibrated, it is obtained The relative delay time between the current to be measured and the voltage to be measured, according to the relative delay time, when the first electrical parameter to be measured is M1, the second electrical parameter to be measured is M2, and the third electrical parameter to be measur...
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