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Three-dimensional memory and its manufacturing method

A manufacturing method and memory technology, which are applied to semiconductor devices, electrical solid-state devices, electrical components, etc., can solve the problems of complex circuit design and layout, and achieve the effects of avoiding connection reliability problems, simple layout, and avoiding deformation.

Active Publication Date: 2022-02-22
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the Xtacking three-dimensional NAND memory architecture, metal lines metal-1, metal-2 and (lower) connecting circuits face complex circuit design and layout problems

Method used

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  • Three-dimensional memory and its manufacturing method

Examples

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no. 1 example

[0059] In a first exemplary embodiment of the present disclosure, a three-dimensional memory is provided.

[0060] figure 2 It is a schematic cross-sectional view of the three-dimensional memory according to the first embodiment of the present disclosure.

[0061] refer to figure 2 As shown, the three-dimensional memory of the present disclosure includes: a storage unit 1 and a logic control unit 5 that are bonded to each other on the front side, and the logic control unit 5 is connected to the control circuit. It is characterized in that the second metal wire 22 of the storage unit 1 The first metal line 21 and the first metal line 21 are respectively arranged on the upper and lower sides of the channel layer 12 in the memory cell 1 , and both the first metal line 21 and the second metal line 22 are electrically connected to the control circuit.

[0062] Figure 2-Figure 3 Among them, the first metal wire 21 and the second metal wire 22 are directly or indirectly led out...

no. 2 example

[0075] In a second exemplary embodiment of the present disclosure, a three-dimensional memory is provided.

[0076] image 3 It is a schematic cross-sectional view of a three-dimensional memory according to a second embodiment of the present disclosure. Components in this embodiment that are the same as those in the first embodiment are denoted by the same reference numerals.

[0077] refer to image 3 As shown, the difference between the three-dimensional memory of this embodiment and the three-dimensional memory of the first embodiment is that the bottom of the common selection line 14 in the three-dimensional memory of this embodiment is directly electrically connected to the second metal line 22, The second connection hole 32 in the first embodiment does not exist.

no. 3 example

[0079] In a third exemplary embodiment of the present disclosure, a method for fabricating a three-dimensional memory is provided.

[0080] Figure 4 It is a flowchart of a manufacturing method for manufacturing the three-dimensional memory shown in the first embodiment according to the third embodiment of the present disclosure.

[0081] refer to Figure 4 As shown, the manufacturing method of the three-dimensional memory of the present disclosure includes:

[0082] Step S31: arranging the second metal line and the first metal line respectively on the upper and lower sides of the channel layer in the memory cell;

[0083] In this embodiment, step S31 includes:

[0084] Sub-step S31a: preparing a substrate 11;

[0085] Sub-step S31b: arranging a second metal wire 22 in the substrate 11 and insulating it from the substrate 11;

[0086] Sub-step S31c: Continue to epitaxially grow the substrate material on the substrate 11 on which the second metal line 22 has been laid, and...

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Abstract

A three-dimensional memory and its manufacturing method. The three-dimensional memory includes: a storage unit and a logic control unit that are bonded to each other on the front, and the logic control unit is connected to a control circuit. It is characterized in that the second metal wire of the storage unit and the first The metal wires are respectively arranged on the upper and lower sides of the channel layer in the memory unit, and both the first metal wire and the second metal wire are electrically connected with the control circuit. By arranging the second metal wire and the first metal wire respectively on the upper and lower sides of the channel layer in the memory cell, by separately arranging the first metal wire and the second metal wire so that the distribution of the metal wire becomes balanced, reducing or The deformation of the storage unit is avoided; at the same time, the metal wiring is simplified by scattered arrangement of the first metal wire and the second metal wire, so that the layout of the connection circuit between the first metal wire and the second metal wire and the control circuit is relatively simple, and the connection is improved. Reliability, avoiding connection reliability problems in the prior art caused by complex layout and process problems.

Description

technical field [0001] The disclosure belongs to the technical field of semiconductor memory and integration, and relates to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] Three-dimensional (3D) NAND is an emerging type of flash memory that addresses the limitations of planar (2D) NAND flash by stacking memory cells together. At present, three-dimensional NAND memory technology is a technology that the country is focusing on developing. [0003] In the Xtacking three-dimensional NAND memory architecture, metal wires metal-1, metal-2 and (lower) connecting circuits face complex circuit design and layout problems. Contents of the invention [0004] (1) Technical problems to be solved [0005] The present disclosure provides a three-dimensional memory and a manufacturing method thereof, so as to at least partially solve the above-mentioned technical problems. [0006] (2) Technical solution [0007] According to one aspect of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11529H01L27/11556H01L27/11573H01L27/11582
CPCH10B41/41H10B41/27H10B43/40H10B43/27
Inventor 张刚霍宗亮
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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