Graded porous oxide memristor shaped like melting hole
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- BEIHANG UNIV
- Publication Date
- 2019-10-25
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a hierarchical porous oxide memristor based on a cave shape, and the oxide memristor has stable, multi-resistance states, and low energy consumption memristor characteristics, and belongs to the technical field of brain-like computing devices. Background technique
[0002] With the continuous improvement of people's requirements for computing performance, a new type of computer with brain-like learning and memory functions has become a research hotspot. The emergence of artificial intelligence has brought great innovations to the development of emerging technologies. Artificial intelligence is a discipline that studies the use of computers to simulate certain human thinking processes and intelligent behaviors (such as learning, reasoning, thinking, planning, etc.). Among them, learning and application based on neural network is an important way to realize artificial intelligence. Due to its advantages of non-volatility, simpl...