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An Embedded Dual Electron Beam Terahertz Back-wave Oscillator

A dual-electron injector and oscillator technology, applied in the terahertz field of vacuum electronics, can solve the problems of difficult to achieve stable transmission, unfavorable actual tube manufacturing, and low interaction efficiency, so as to reduce the cathode current density, increase the input current, and reduce the effect of difficulty

Active Publication Date: 2020-11-20
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the traditional rectangular grating return wave tube is based on the study of the ribbon beam structure, and the ribbon beam can indeed improve the limited output power due to the size co-transition effect to a certain extent, but the electron optics of the ribbon beam The system and magnetic focus system are much more complicated than the circular injection, and it is difficult to achieve stable transmission without using the actual pipe making in engineering
On the other hand, when the electrons are injected on the surface of the grating, the interaction efficiency is low because the surface field of the grating is an attenuation field.

Method used

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  • An Embedded Dual Electron Beam Terahertz Back-wave Oscillator
  • An Embedded Dual Electron Beam Terahertz Back-wave Oscillator
  • An Embedded Dual Electron Beam Terahertz Back-wave Oscillator

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0028] The present invention provides an embedded dual-electron injection terahertz back-wave oscillator, such as Figure 1 to Figure 3 As shown, it includes: a metal waveguide 4, one end is an injection end for electron injection input, and the other end is an output end for electron injection output; an electron gun double electron injection cathode 1 is arranged at the injection end of the metal waveguide 4 , and the inner space of the metal waveguide 4 form a beam interaction area, which is used to emit electron beams with a set voltage; a plurality of double semicircular groove grating structures 2 are arranged at equal intervals in the metal waveguide 4, and are doubled with the electron gun The electron injection ...

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Abstract

The invention provides an embedded type double-electron-beam terahertz wave-return oscillator; the embedded type double-electron-beam terahertz wave-return oscillator comprises a metal waveguide, an electron gun double-electron beam cathode, a plurality of double semicircular groove grating structures, a drift region, an output port and double-electron-beam collector, wherein one end of the metalwaveguide is an injection end and is used for electron beam input, and the other end of the metal waveguide is an output end for electron beam output; the electron gun double-electron beam cathode isarranged at the metal waveguide injection end and forms a wave-beam interaction zone with the metal waveguide inner space; the plurality of double semicircular groove grating structures are arranged at equal intervals in the metal waveguide; the drift region is arranged between the metal waveguide injection end and the middle part of the metal waveguide and used for dividing the plurality of double semicircular groove grating structures into a first segment double semicircular groove grating structure and a second segment double semicircular groove grating structure; and the output port is arranged in the metal waveguide injection end and used for power output after the beam-wave interaction; and double-electron-beam collector is arranged at the metal waveguide output end and is used for recovering the electron beams after the beam-wave interaction;.

Description

technical field [0001] The invention relates to the field of vacuum electronics terahertz technology, in particular to an embedded double electron beam terahertz return wave oscillator. Background technique [0002] Terahertz wave (Terahertz wave, THz for short) refers to electromagnetic waves with a wavelength range of 3 mm to 30 um and a frequency of 0.1 to 10 THz. In terms of frequency, terahertz waves are located between the far-infrared and submillimeter bands, and some border areas overlap with the two bands, but strictly speaking they belong to the far-infrared band, also known as T-rays; in terms of energy, Terahertz wave is a transitional field between electronics and photonics, and it is a very special band in the electromagnetic spectrum with unique electromagnetic wave properties. The characteristics of terahertz waves promote its research and development in the fields of anti-terrorism security inspection, environmental detection, medical and health, agricultur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J25/40H01J23/16
CPCH01J23/16H01J25/40
Inventor 刘文鑫叶青青郭鑫赵超张兆传
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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