Unlock instant, AI-driven research and patent intelligence for your innovation.

Electron transport material and application thereof

A technology for electron transport materials and electroluminescent devices, applied in luminescent materials, circuits, photovoltaic power generation, etc., can solve the problems of high cost and low yield, and achieve the effect of strong rigidity, low refractive index, and inhibition of accumulation

Inactive Publication Date: 2019-11-08
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because this technology requires a complex microstructure manufacturing process, there are still many problems when it is applied to the actual industry, such as low yield and high cost caused by technical complexity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electron transport material and application thereof
  • Electron transport material and application thereof
  • Electron transport material and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Synthesis of compound 1

[0047]

[0048]Weighed 8.5 g (12.6 mmol) of intermediate a (bromo-trimethylbenzene triazine), 13.96 g (44.3 mmol) of intermediate b (phenylbenzimidazole boronic acid), and 0.51 g (44.3 mmol) of tetrakis (triphenylphosphine) palladium catalyst g (0.44 mmol), 6.3mL 2M potassium carbonate aqueous solution, 100mL toluene and 25mL ethanol were added to a 500mL three-necked flask, heated to reflux and stirred overnight under nitrogen protection. After the reaction was stopped and cooled to room temperature, it was extracted with dichloromethane, and the organic phase was retained, dried with anhydrous magnesium sulfate and then spin-dried to dry the solvent. The crude product was separated by silica gel column chromatography, and the eluent was dichloromethane / n-hexane. Obtain 6.30 g of compound 1 pure product, the yield is 40%. C87H72N9, Exact Mass: 1242.59, Found: 1243.56; Elemental Analysis: C, 84.03; H, 5.84; N, 10.14.

Embodiment 2

[0050] Synthesis of Compound 4

[0051]

[0052] Weigh respectively intermediate a (bromo-trimethylbenzene triazine) 7.6g (11.3mmol), intermediate c (anthracene boric acid) 13.83g (39.6mmol), tetrakis (triphenylphosphine) palladium catalyst 0.48g (0.41mmol ), 6.0mL 2M potassium carbonate aqueous solution, 100mL toluene and 25mL ethanol were added into a 500mL three-necked flask, heated to reflux and stirred overnight under nitrogen protection. After the reaction was stopped and cooled to room temperature, it was extracted with dichloromethane, and the organic phase was kept, dried with anhydrous magnesium sulfate and then spun to dry the solvent. The crude product was separated by silica gel column chromatography, and the eluent was dichloromethane / n-hexane. 6.83 g of the pure product of compound 4 was obtained with a yield of 45%. C102H75N3, Exact Mass: 1342.71, Found: 1343.83; Elemental Analysis: C, 91.30; H, 5.54; N, 3.16.

Embodiment 3

[0054] Synthesis of compound 7

[0055]

[0056] Weigh respectively intermediate a (bromo-trimethylbenzene triazine) 8.0g (11.9mmol), intermediate d (anthracene boric acid) 14.5g (41.6mmol), tetrakis (triphenylphosphine) palladium catalyst 0.49g (0.42mmol ), 6.1mL of 2M potassium carbonate aqueous solution, 100mL of toluene and 25mL of ethanol were added into a 500mL three-necked flask, heated to reflux and stirred overnight under nitrogen protection. After the reaction was stopped and cooled to room temperature, it was extracted with dichloromethane, and the organic phase was kept, dried with anhydrous magnesium sulfate and then spun to dry the solvent. The crude product was separated by silica gel column chromatography, and the eluent was dichloromethane / n-hexane. 6.50 g of pure compound 7 was obtained with a yield of 41%. C102H75N3, Exact Mass: 1242.53, Found: 1243.59; Elemental Analysis: C, 84.02; H, 5.83; N, 10.15.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an electron transport material and application thereof. According to the electron transport material, the molecular structure design is constructed by selecting groups with high current carrier mobility, and thus molecules have the high current carrier mobility; and in addition, a core group of the electron transport material is of a structure based on mesitylene triazine,the structure is high in molecular rigidity, packing between the molecules can be effectively inhibited, thus the electron transport material has the low refractive index, and surface plasma state loss of organic electroluminescence devices can be effectively inhibited. By applying the electron transport material into the organic electroluminescence devices, the forward light output efficiency ofthe devices can be increased by 14% or above.

Description

technical field [0001] The invention relates to the field of organic conductive materials, in particular to an electron transport material and its application. Background technique [0002] In OLED devices, under the action of current, organic molecules with light-emitting functions realize the recombination of holes and electrons, and emit light in random directions in the form of dipoles. However, not all emitted light can be used for illumination or display, only a part of the light that can reach the outside of the substrate, and a large part is lost in the device in various forms. The main forms of loss are: surface plasmon state (SPP) loss caused by metal electrodes, waveguide (Wave Guide) loss caused by high refractive index such as organic layer and ITO, and total reflection at the interface between the substrate material and air, etc. Substrate loss. The superposition of these losses makes the light output efficiency of common planar OLED devices far less than 100...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07D403/14C07D403/10C07D251/24H01L51/50H01L51/54
CPCC07D403/14C07D403/10C07D251/24H10K85/626H10K85/654H10K85/6572H10K50/00C09K11/06Y02P70/50H10K85/615H10K50/115H10K50/16Y02E10/549C09K2211/1018H10K59/00
Inventor 庄锦勇陈颖
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD