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Photon-integrated two-zone chaotic semiconductor laser chip

A photon integration and laser technology, applied in the structure of the active region, the structure of the optical resonator, etc., can solve the problems of limiting the application of chaotic lasers, narrow bandwidth, uneven spectrum, etc., to achieve practical, flat spectrum, structural simple effect

Pending Publication Date: 2019-11-08
TAIYUAN UNIV OF TECH
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Problems solved by technology

[0006] However, the above schemes all use a delayed optical feedback structure to generate chaotic lasers, and the chaotic lasers generated by them have obvious time-delay characteristics
Moreover, the chaotic laser energy generated by optical feedback is mainly concentrated near the relaxation oscillation frequency, and its spectrum is not flat and its bandwidth is narrow.
These disadvantages will greatly limit the application of chaotic lasers

Method used

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  • Photon-integrated two-zone chaotic semiconductor laser chip
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Embodiment Construction

[0021] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings.

[0022] as attached figure 1 As shown, a photonic integrated dual-zone chaotic semiconductor laser chip provided by the present invention is composed of a chip substrate 1 , a master distributed feedback laser 2 , a slave distributed feedback laser 3 and an optical waveguide 4 . Wherein, the master distributed feedback laser 2 , the slave distributed feedback laser 3 and the optical waveguide 4 are all integrated on the chip substrate 1 . The master distributed feedback laser 2 is connected to the slave distributed feedback laser 3 in a back-to-back manner, one end of the optical waveguide 4 is connected to the slave distributed feedback laser 3, and the other end is used as an output. Both master and slave distributed...

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Abstract

The invention relates to a photon-integrated two-zone chaotic semiconductor laser chip, which comprises a chip substrate, a main distributed feedback laser, a slave distributed feedback laser and a light waveguide, wherein the main distributed feedback laser, the slave distributed feedback laser and the light waveguide are integrated on the chip substrate; the main distributed feedback laser and the slave distributed feedback laser are connected by adopting a side-by-side mode; one end of the light waveguide is connected with the slave distributed feedback laser and the other end is used as output. The chip integrates the two distributed feedback lasers on the same chip substrate, the inner gratings both adopt equivalent displacement gratings, and the coupling efficiency of the main and the slave laser is higher. Through applying bias current to the main distributed feedback laser and the slave distributed feedback laser, the two distributed feedback lasers emit light to be injected tothe lasers to disturb the light fields, and chaotic laser with a high bandwidth and no delay characteristics is thus generated.

Description

technical field [0001] The invention relates to the technical field of wireless communication, and more specifically relates to a photonic integrated dual-zone chaotic semiconductor laser chip. Background technique [0002] In recent years, due to the characteristics of chaotic laser-like noise and high bandwidth, it has been widely used in various fields such as fast physical random number generation, secure communication, optical time domain reflectometer and radar detection. [0003] Semiconductor lasers have the advantages of small size, low price, and easy integration. The use of semiconductor lasers to generate chaotic lasers has attracted extensive attention from researchers. Semiconductor lasers are Class B lasers. By adding external disturbances, such as optical feedback, photoelectric feedback, optical injection, and mutual injection, semiconductor lasers can generate chaotic lasers. However, the current research on chaotic laser generation based on semiconductor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/34
CPCH01S5/12H01S5/34
Inventor 李璞蔡强张建国贾志伟张云山施跃春陈向飞王云才
Owner TAIYUAN UNIV OF TECH
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