Si-based Mosfet device and preparation method thereof

A device and dielectric layer technology, applied in the field of Mosfet, can solve problems such as difficult regulation of threshold voltage

Active Publication Date: 2019-11-12
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The application provides a Si-based Mosfet device and its preparation method, which can solve the problem that the threshold voltage of the Mosfet device provided in the related art is difficult to control

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  • Si-based Mosfet device and preparation method thereof
  • Si-based Mosfet device and preparation method thereof

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Embodiment Construction

[0030] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a s...

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Abstract

The present application discloses an Si-based Mosfet device and a preparation method thereof. The method comprises the following steps: a step of forming a high K dielectric layer on an Si substrate,a step of injecting F ions into the high K dielectric layer, and a step of forming a grid electrode, a source electrode, and a drain electrode after the F ions are injected in the high K dielectric layer. An embedment of the application also discloses the Si-based Mosfet device comprising the Si substrate, and the high K dielectric layer on the Si substrate, wherein the high K dielectric layer isprovided with the F ions. According to the Si-based Mosfet device and the preparation method thereof, the F ions are injected into the high K dielectric layer formed on the Si substrate, therefore thehigh K dielectric layer is provided with the F ions, internal fixed charge density of the high K dielectric layer can be increased, attraction / repulsion effects can be exerted on a semiconductor electric conduction channel, an energy band structure of an MOS is changed, channel turn-on voltage can therefore be adjusted, and consequently threshold voltage of the device can be changed.

Description

technical field [0001] The present application relates to the technical field of Mosfet, in particular to a Si-based Mosfet device and a preparation method thereof. Background technique [0002] As the feature size of semiconductor devices gradually shrinks according to Moore's Law, traditional MOSFET devices require thinner gate dielectric layers and higher channel doping. In order to ensure device performance, the requirements for process parameters are becoming more and more stringent. Device turn-on voltage (threshold voltage) is a key parameter of MOSFET devices. Traditionally, it is regulated by changing its dopant concentration, gate dielectric layer thickness, and electrode work function. However, the reduction in device size has made these The process window of the traditional adjustment method is getting smaller and smaller, which will cause problems such as a decrease in device yield. Therefore, it is very important to find another threshold voltage adjustment me...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/02H01L21/336H01L29/423H01L29/51H01L29/78
CPCH01L21/02321H01L21/0234H01L29/401H01L29/42364H01L29/51H01L29/517H01L29/66568H01L29/78
Inventor 李可张志诚沈震
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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