Si-based mosfet device and preparation method thereof

A device and dielectric layer technology, applied in the field of Mosfet, can solve the problem of difficulty in adjusting the threshold voltage and achieve the effect of changing the threshold voltage

Active Publication Date: 2021-10-15
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The application provides a Si-based Mosfet device and its preparation method, which can solve the problem that the threshold voltage of the Mosfet device provided in the related art is difficult to control

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  • Si-based mosfet device and preparation method thereof
  • Si-based mosfet device and preparation method thereof

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Embodiment Construction

[0030] The technical solutions in the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a s...

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Abstract

The application discloses a Si-based Mosfet device and its preparation method, comprising the following steps: forming a high-K dielectric layer on a Si-based layer; implanting F ions into the high-K dielectric layer; after implanting F ions into the high-K dielectric layer, forming gate, source and drain. The embodiment of the present application also discloses a Si-based Mosfet device, comprising: a Si-based; a high-K dielectric layer formed on the Si-based, wherein the high-K dielectric layer has F ions. This application implants F ions into the high-K dielectric layer formed on the Si base, so that the high-K dielectric layer has F ions to increase the internal fixed charge density of the high-K dielectric layer, thereby generating attraction / repulsion effects on the semiconductor conductive channel , the energy band structure at the MOS is changed, and then the channel turn-on voltage is adjusted, thereby changing the device threshold voltage.

Description

technical field [0001] The present application relates to the technical field of Mosfet, in particular to a Si-based Mosfet device and a preparation method thereof. Background technique [0002] As the feature size of semiconductor devices gradually shrinks according to Moore's Law, traditional MOSFET devices require thinner gate dielectric layers and higher channel doping. In order to ensure device performance, the requirements for process parameters are becoming more and more stringent. Device turn-on voltage (threshold voltage) is a key parameter of MOSFET devices. Traditionally, it is regulated by changing its dopant concentration, gate dielectric layer thickness, and electrode work function. However, the reduction in device size has made these The process window of the traditional adjustment method is getting smaller and smaller, which will cause problems such as a decrease in device yield. Therefore, it is very important to find another threshold voltage adjustment me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/02H01L21/336H01L29/423H01L29/51H01L29/78
CPCH01L21/02321H01L21/0234H01L29/401H01L29/42364H01L29/51H01L29/517H01L29/66568H01L29/78
Inventor 李可张志诚沈震
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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