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Groove-type device with low specific on-resistance and manufacturing method thereof

A technology of specific on-resistance and conductivity type, applied in the field of grooved devices and their manufacturing, can solve the problem of not fully tapping the potential of the device, and achieve the effect of reducing the specific on-resistance and maintaining stability

Inactive Publication Date: 2019-11-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in order to simplify the process flow, the layout of trench devices usually adopts a trench structure with a consistent depth in the active area, which fails to fully tap the potential of the device in the layout structure

Method used

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  • Groove-type device with low specific on-resistance and manufacturing method thereof
  • Groove-type device with low specific on-resistance and manufacturing method thereof
  • Groove-type device with low specific on-resistance and manufacturing method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] figure 2 It is a schematic structural diagram of a grooved device in Embodiment 1 of the present invention, specifically including:

[0049] Including a first conductivity type substrate 152, a first conductivity type drift region 111, a first conductivity type source contact region 151, a second conductivity type well region 122, a second conductivity type source contact region 121, and a source metal contact 130 , a first dielectric oxide layer 141, a second dielectric oxide layer 142, a third dielectric oxide layer 143, a fourth dielectric oxide layer 144, a control gate polysilicon electrode 131, and a separation gate polysilicon electrode 132;

[0050] The drift region 111 of the first conductivity type is located above the substrate 152 of the first conductivity type, the well region 122 of the second conductivity type is located above the drift region 111 of the first conductivity type, and the source contact region 151 of the first conductivity type is located ...

Embodiment 2

[0069] image 3 It is a schematic structural diagram of a grooved device according to Embodiment 2 of the present invention, specifically including:

[0070] First conductivity type substrate 152, first conductivity type drift region 111, first conductivity type source contact region 151, second conductivity type well region 122, second conductivity type source terminal contact region 121, source metal contact 130, A first dielectric oxide layer 141, a second dielectric oxide layer 142, and a control gate polysilicon electrode 131;

[0071] The drift region 111 of the first conductivity type is located above the substrate 152 of the first conductivity type, the well region 122 of the second conductivity type is located above the drift region 111 of the first conductivity type, and the source contact region 151 of the first conductivity type is located in the well region of the second conductivity type 122, the source metal contact 130 short-circuits the second conductivity ty...

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Abstract

The invention provides a groove-type device with low specific on-resistance and a manufacturing method. The device comprises a substrate of a first conductive type, a drift region of a first conductive type, a source electrode contact region of a first conductive type, a well region of a second conductive type, a source end contact region of a second conductive type, a source electrode metal contact, a first dielectric oxide layer, a second dielectric oxide layer, a third dielectric oxide layer, a fourth dielectric oxide layer, a control gate polycrystalline silicon electrode and a separationgate polycrystalline silicon electrode. According to the invention, the three-dimensional depletion capability of a deep groove structure is fully explored, so a groove-type device structure with alternately distributed deep grooves and shallow grooves in the z direction is provided; the deep grooves are used for exhausting the additional drift region of the first conductive type, and the voltageresistance stability of the device is kept; meanwhile, more conductive paths are provided for the device when the additional drift region of the first conductive type is in an on state, and the specific on resistance of the device is reduced.

Description

technical field [0001] The invention belongs to the field of power semiconductors, and mainly proposes a slot device with low specific on-resistance and a manufacturing method thereof. Background technique [0002] Power semiconductor devices have been widely used in consumer electronics, computers and peripherals, network communications, electronic special equipment and instruments due to their characteristics of high input impedance, low loss, fast switching speed, no secondary breakdown, and wide safe working area. Instrumentation, automotive electronics, LED display and electronic lighting and many other aspects. Among them, the slot-type device has attracted the attention of many researchers because of its small on-resistance and small layout area. By transferring the channel and drift region of the device from the lateral direction to the vertical direction, the device area is reduced, and the channel density of the device is increased at the same time, thereby greatl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/78H01L29/739H01L21/336H01L21/331
CPCH01L29/4236H01L29/66348H01L29/66734H01L29/7397H01L29/7813
Inventor 章文通何俊卿杨昆王睿乔明王卓张波李肇基
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA