Groove-type device with low specific on-resistance and manufacturing method thereof
A technology of specific on-resistance and conductivity type, applied in the field of grooved devices and their manufacturing, can solve the problem of not fully tapping the potential of the device, and achieve the effect of reducing the specific on-resistance and maintaining stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0048] figure 2 It is a schematic structural diagram of a grooved device in Embodiment 1 of the present invention, specifically including:
[0049] Including a first conductivity type substrate 152, a first conductivity type drift region 111, a first conductivity type source contact region 151, a second conductivity type well region 122, a second conductivity type source contact region 121, and a source metal contact 130 , a first dielectric oxide layer 141, a second dielectric oxide layer 142, a third dielectric oxide layer 143, a fourth dielectric oxide layer 144, a control gate polysilicon electrode 131, and a separation gate polysilicon electrode 132;
[0050] The drift region 111 of the first conductivity type is located above the substrate 152 of the first conductivity type, the well region 122 of the second conductivity type is located above the drift region 111 of the first conductivity type, and the source contact region 151 of the first conductivity type is located ...
Embodiment 2
[0069] image 3 It is a schematic structural diagram of a grooved device according to Embodiment 2 of the present invention, specifically including:
[0070] First conductivity type substrate 152, first conductivity type drift region 111, first conductivity type source contact region 151, second conductivity type well region 122, second conductivity type source terminal contact region 121, source metal contact 130, A first dielectric oxide layer 141, a second dielectric oxide layer 142, and a control gate polysilicon electrode 131;
[0071] The drift region 111 of the first conductivity type is located above the substrate 152 of the first conductivity type, the well region 122 of the second conductivity type is located above the drift region 111 of the first conductivity type, and the source contact region 151 of the first conductivity type is located in the well region of the second conductivity type 122, the source metal contact 130 short-circuits the second conductivity ty...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


