High-efficiency GaN power supply module for LED vehicle lamp power supply

Abstract

The invention belongs to the technical field of power electronics, and specifically relates to a high-efficiency GaN power supply module for LED vehicle lamp power supply, which includes an input filter module, a GaN PFC power factor correction module, and a GaN half-bridge LLC converter module. The topology selection of input filter plus a two-stage isolated DC-DC converter is adopted more flexibly, thereby realizing higher performance; by adopting an LGA-packaged GaN HEMT device, high frequency of the power supply module is realized; a double-sided layout structure is adopted to perform optimized design on a gate driving circuit, the HEMT device, a power bus and a cooling layout, the reliability is improved, and high-density power integration and high efficiency are thus realized. The high-efficiency GaN power supply module for LED vehicle lamp power supply can be widely used in a vehicle-mounted DC-DC converter system to provide power for an LED lighting system, and can also be widely used in a high-density power supply module that uses a GaN power device for power integration.

Description

technical field [0001] The invention relates to a novel high-efficiency GaN power supply module used for power supply of LED vehicle lamps, belonging to the technical field of automotive electronics. Background technique [0002] In recent years, due to the deterioration of environmental pollution and the gradual decline of air quality, people have paid more and more attention to electric vehicles. The government has issued a series of relevant policies to encourage the development of the electric vehicle industry, such as increasing subsidies for the purchase of electric vehicles, ensuring that electric vehicles are given priority in licensing, and actively promoting the construction of electric vehicle infrastructure to achieve full coverage of charging piles. Solve the problem of difficult charging of electric vehicles. Faced with the promulgation of various supporting policies, major companies have also increased investment in research and development of electric vehicl...

AI Technical Summary

Problems solved by technology

[0011] However, to improve the power density by increasing the switching frequency, we need to face two bottleneck problems: one is that the current of the switching branch changes very rapidly and the di / dt is very high during the switching process of the GaN device. Parasitic inductance, when the current changes rapidly, can generate high spike overvoltage across the switching device

If the wiring is not optimized enough and the parasitic inductance is large, it will directly affect the normal operation of the circuit

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