Silicon carbide MOS device with majority carrier diode
A majority carrier, MOS device technology, applied in the field of silicon carbide MOS devices, can solve the problems of large proportion, increase the conduction loss of MOS devices, and affect the reverse breakdown voltage of MOS devices, etc.
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[0013] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with the embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0014] Embodiments of the present invention are as figure 1 As shown, the silicon carbide substrate (001), drift region (002), current enhancement injection region (004) and source region (008) are all N-type doped, wherein the substrate (001) and source region (008) are Heavy doping, the concentration can be greater than 1E18cm -3 , the drift region (002) is lightly doped, the concentration can be 8E15cm -3 , while the doping concentration of the current-enhancing injection region (004) is higher than that of the drift region, at 1E17cm -3 about. The base region (007), th...
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