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Two-step process for silicon gapfill

A process and gap technology, applied in the field of deposited film, can solve problems such as structural failure and opening

Active Publication Date: 2019-11-19
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This seam can open during reprocessing and cause structural failure

Method used

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  • Two-step process for silicon gapfill
  • Two-step process for silicon gapfill
  • Two-step process for silicon gapfill

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Embodiment Construction

[0013] Before describing several exemplary embodiments of the present invention, it should be understood that the present invention is not limited to the details of the configuration or process steps set forth in the following description. The present invention can have other embodiments and can be practiced or implemented in various ways.

[0014] "Substrate" as used herein refers to any substrate or material surface formed on a substrate on which film processing is performed during the manufacturing process. For example, substrate surfaces that can be processed on include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, The materials of glass, sapphire, and any other materials such as metals, metal nitrides, metal alloys and other conductive materials, depending on the application. The substrate includes but is not limited to a semiconductor wafer. ...

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Abstract

Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si-X film where X=C, O or N and curing the flowable film or Si-X film to solidify thefilm. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film or the Si-X film.

Description

Technical field [0001] The present disclosure generally relates to methods of depositing films. In particular, the present disclosure relates to a process for filling narrow trenches with Si-X (X=N, O, or C) materials. Background technique [0002] In the manufacture of microelectronic devices, for many applications, it is necessary to fill narrow trenches with an aspect ratio (AR) greater than 10:1 without leaving voids. One application is shallow trench isolation (STI). For this application, the film needs to be of high quality with very low leakage throughout the trench (for example, with a wet etch rate ratio less than 2). As the structure size decreases and the aspect ratio increases, the post-curing method of the newly deposited flowable film becomes difficult. This leads to films with different compositions throughout the filled trench. [0003] Amorphous silicon has been widely used as a sacrificial layer in the semiconductor manufacturing process because it can provide...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCC23C16/045C23C16/325C23C16/36C23C16/401C23C16/50C23C16/56H01L21/02126H01L21/02274H01L21/02348H01L21/02211H01L21/0234H01L21/02164H01L21/0217H01L21/0214H01L21/02167H01L21/02208H01L21/28518C23C16/513C23C16/30
Inventor A·B·玛里克P·曼纳江施施
Owner APPLIED MATERIALS INC