Etching device, etching system and etching method

Abstract

The embodiment of the invention discloses an etching device. The etching device comprises an etching cavity; a bearing plate which is located in the etching cavity, wherein a wafer is placed on the bearing plate; a spray head which is located on the bearing plate, and is used for spraying etching liquid to the wafer; and a plurality of heating devices which are installed on the bearing plate and are used for heating the wafer, wherein each heating device is used for independently heating so as to change the etching rate of the etching liquid on each heating device. The embodiment of the invention further discloses an etching system and an etching method.

Description

technical field [0001] The present application relates to the field of etching, in particular to an etching device, an etching system and an etching method. Background technique [0002] In the existing wafer manufacturing process, processes such as exposure, development, and etching (etch) are generally required. Existing etching processes are generally divided into wet etching and dry etching. The etching device in the wet etching process includes a carrier plate and a nozzle. The wafer to be etched is placed on the carrier plate. The nozzle is located above the wafer. Etching is performed. [0003] However, in the existing etching device, when the etchant is etching the wafer, the etching rate is faster in some places on the wafer, and the etching rate is slower in some places, and the etching rate is inconsistent and uncontrollable everywhere. As a result, the surface of the etched wafer is uneven and does not meet the requirements. [0004] In order to improve the p...

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Problems solved by technology

[0003] However, in the existing etching device, when the etchant is etching the wafer, the etching rate is faster in some places on the wafer, and the etching rate is slower in some places, and the etching rate is inconsistent and uncontrollable everywhere. As a result, the surface of the etched wafer is uneven and does not meet the requirements

[0004] In order to improve the problem of inconsistent etching rate, the existing technology proposes to expand the swing range of the nozzle or increase the rotation speed of the carrier plate to improve the problem of inconsistent etching rate. However, this method will cause the etching solution to touch the The sidewall of the device splashes back onto the wafer surface, causing defects in the wafer

The existing technology also proposes to increase the etching rate by increasing the temperature of the etching solution ejected from the nozzle. However, increasing the temperature is to increase the etching rate of the entire etching solution. The etching rate of each part of the wafer is still different, and the etching rate The speed is not the same and may become larger

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