Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching device, etching system and etching method

An etching device and etching chamber technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of inconsistent etching rate, different etching rate, and enlargement, etc., and achieve the goal of reducing defects Probability, reduced risk of spatter, effect of increased etch rate

Inactive Publication Date: 2019-11-22
YANGTZE MEMORY TECH CO LTD
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the existing etching device, when the etchant is etching the wafer, the etching rate is faster in some places on the wafer, and the etching rate is slower in some places, and the etching rate is inconsistent and uncontrollable everywhere. As a result, the surface of the etched wafer is uneven and does not meet the requirements
[0004] In order to improve the problem of inconsistent etching rate, the existing technology proposes to expand the swing range of the nozzle or increase the rotation speed of the carrier plate to improve the problem of inconsistent etching rate. However, this method will cause the etching solution to touch the The sidewall of the device splashes back onto the wafer surface, causing defects in the wafer
The existing technology also proposes to increase the etching rate by increasing the temperature of the etching solution ejected from the nozzle. However, increasing the temperature is to increase the etching rate of the entire etching solution. The etching rate of each part of the wafer is still different, and the etching rate The speed is not the same and may become larger

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching device, etching system and etching method
  • Etching device, etching system and etching method
  • Etching device, etching system and etching method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings. Apparently, the described embodiments are only part but not all of the embodiments of the present application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0047] It should be noted that the terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, rather than limiting the present application. The singular forms "a", "said" and "the" used in the embodiments of this application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" as used herein refers to and includes any and all possible ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention discloses an etching device. The etching device comprises an etching cavity; a bearing plate which is located in the etching cavity, wherein a wafer is placed on the bearing plate; a spray head which is located on the bearing plate, and is used for spraying etching liquid to the wafer; and a plurality of heating devices which are installed on the bearing plate and are used for heating the wafer, wherein each heating device is used for independently heating so as to change the etching rate of the etching liquid on each heating device. The embodiment of the invention further discloses an etching system and an etching method.

Description

technical field [0001] The present application relates to the field of etching, in particular to an etching device, an etching system and an etching method. Background technique [0002] In the existing wafer manufacturing process, processes such as exposure, development, and etching (etch) are generally required. Existing etching processes are generally divided into wet etching and dry etching. The etching device in the wet etching process includes a carrier plate and a nozzle. The wafer to be etched is placed on the carrier plate. The nozzle is located above the wafer. Etching is performed. [0003] However, in the existing etching device, when the etchant is etching the wafer, the etching rate is faster in some places on the wafer, and the etching rate is slower in some places, and the etching rate is inconsistent and uncontrollable everywhere. As a result, the surface of the etched wafer is uneven and does not meet the requirements. [0004] In order to improve the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/306
CPCH01L21/30604H01L21/6708H01L21/67098H01L21/67248
Inventor 白靖宇
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products