2results about How to "Control etch rate" patented technology

The application relates to a glass substrate via hole method, a Mini-LED substrate and a device. The glass substrate via hole method comprises the following steps: providing a glass substrate, the glass substrate having opposite A and B surfaces; performing laser treatment on the A surface to form pre-penetration array dots, and performing film coating treatment on the B surface to form a protective film; and performing via hole treatment on the glass substrate by using a first etching solution containing HF and H2SO4 to form a via hole extending from the pre-penetration array dots on the A surface to the B surface. The via hole method provided by the application can form a large number of via holes with regular hole shapes, uniform hole diameters and high via hole rates on the glass substrate.

The invention relates to a high-brightness-ratio chip coarsening etching solution and a preparation method and application thereof, and the high-brightness-ratio chip coarsening etching solution comprises the following components by weight: 20-50 parts of quaternary ammonium hydroxide; 20-50 parts of ammonium salt; 1-15 parts of a buffer agent; 0.1 to 1 part of a surfactant; and 30-50 parts of ultrapure water. The addition of the buffer agent can inhibit the generation of precipitates, balance the pH and Factivity, control the etching rate, form a uniform and fine pyramid structure on the surface of the epitaxial layer, and avoid the problem of over-etching caused by too fast local micro-chemical reaction; and meanwhile, the buffer agent can also enable the quaternary ammonium hydroxide to be uniformly adsorbed on the LED chip, so that further lateral erosion is avoided.