3results about How to "Control etch rate" patented technology

The application relates to a glass substrate via hole method, a Mini-LED substrate and a device. The glass substrate via hole method comprises the following steps: providing a glass substrate, the glass substrate having opposite A and B surfaces; performing laser treatment on the A surface to form pre-penetration array dots, and performing film coating treatment on the B surface to form a protective film; and performing via hole treatment on the glass substrate by using a first etching solution containing HF and H2SO4 to form a via hole extending from the pre-penetration array dots on the A surface to the B surface. The via hole method provided by the application can form a large number of via holes with regular hole shapes, uniform hole diameters and high via hole rates on the glass substrate.

The present invention specifically relates to a TiN and Ti metal film etching solution and a preparation method thereof. The etching solution mainly comprises an oxidant, a stabilizer, an ammonium salt, an oxygen promoter, a surfactant and acetic acid. The etching solution uses an oxidant to oxidize TiN and Ti to form oxides for etching; the ammonium salt can be used as a corrosion inhibitor to complex with metal ions; an inorganic acid or an organic acid is used as a secondary oxidant to increase the oxidizing property of the oxidant and provide sufficient hydrogen ions, so that the concentration of the oxidant is maintained at a high level, the etching rate is maintained stable, and the use / storage life of the etching solution is extended; the surfactant can reduce the surface tension of the solution and promote the etching uniformity and integrity of TiN and Ti. The etching solution used according to the method of the present invention can ensure that the etching rates of the TiN metal film and the Ti metal film are basically the same (the difference between the etching rates of the two is ≤17 Å / min).

The invention relates to a high-brightness-ratio chip coarsening etching solution and a preparation method and application thereof, and the high-brightness-ratio chip coarsening etching solution comprises the following components by weight: 20-50 parts of quaternary ammonium hydroxide; 20-50 parts of ammonium salt; 1-15 parts of a buffer agent; 0.1 to 1 part of a surfactant; and 30-50 parts of ultrapure water. The addition of the buffer agent can inhibit the generation of precipitates, balance the pH and Factivity, control the etching rate, form a uniform and fine pyramid structure on the surface of the epitaxial layer, and avoid the problem of over-etching caused by too fast local micro-chemical reaction; and meanwhile, the buffer agent can also enable the quaternary ammonium hydroxide to be uniformly adsorbed on the LED chip, so that further lateral erosion is avoided.