Etchant composition for simultaneous etching of multilayer film having zinc oxide and silver

A zinc oxide and oxide technology, applied in the direction of surface etching composition, chemical instruments and methods, electrical components, etc., can solve the problems of large etching difference and low chemical resistance of zinc oxide

Active Publication Date: 2020-07-07
KANTO CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, the present inventors faced the following problem: In the case of using an etchant containing strong acid such as nitric acid, sulfuric acid, etc. , due to the low chemical resistance of zinc oxi...

Method used

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  • Etchant composition for simultaneous etching of multilayer film having zinc oxide and silver
  • Etchant composition for simultaneous etching of multilayer film having zinc oxide and silver
  • Etchant composition for simultaneous etching of multilayer film having zinc oxide and silver

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 14

[0085] (Evaluation method of Example 14)

preparation Embodiment 9

[0086] Such as figure 2 As shown, films of silicon nitride (200nm) (2), silver (100nm) (3), zinc-silicon-oxide (50nm) (4) were sequentially formed on a glass substrate (1), and a resist (5 ) patterned on it, and cut the bottom plate into a size of 15mm×15mm. After preparing the etching solution composition described in Example 9, the above etching solution composition was incubated at 30° C. for 20 minutes. The bottom plate was immersed in 40 mL of etching solution, stirred and etched at 30 °C. The etch time alone was 45 seconds. After immersion in the etching solution for 68 seconds, the bottom plate was washed with ultrapure water for 10 seconds, and dried under nitrogen flow. After cutting the bottom plate, the cross section was observed using FE-SEM (manufactured by Hitachi High-Tech Co., Ltd., model: SU8220). The cross-sectional shape observed by FE-SEM is as follows image 3 shown. The amount of side etching (S.E.) of zinc-silicon-oxide was 0.62 μm, and that of si...

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Abstract

The object of the present invention is to provide an etching solution that can perform etching simply and economically while reducing the side etching difference of a laminated film adjacent to a zincoxide or a transparent metal oxide film containing zinc oxide and a silver or silver alloy film. combination. The present invention relates to an etching solution composition for simultaneously etching the above two films of a laminated film substrate where a zinc oxide or a transparent metal oxide film containing zinc oxide and a silver or silver alloy film are adjacent to each other, which includes (A) peroxide Hydrogen, (B) silver complexing agent, and (C) water.

Description

technical field [0001] The present invention relates to an etchant composition for simultaneously etching laminated films containing zinc oxide and silver used in organic light-emitting diodes, solar cells, and the like, and an etching method for a substrate using the etchant composition. Background technique [0002] In recent years, a laminated film containing zinc oxide or a transparent metal oxide film containing zinc oxide and silver or a silver alloy film ( figure 1 ). Transparent metal oxide films are used as materials for electron transport layers or electrodes. Among them, zinc oxide or transparent metal oxides containing zinc oxide are not only more transparent than the existing material indium-tin-oxide (ITO), but zinc- Silicon-oxide (ZSO) has high electron mobility as an electron transport layer. Also, silver or silver alloy is used as an electrode material, and has characteristics of high reflectance and low resistance. Such laminated films are expected to be...

Claims

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Application Information

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IPC IPC(8): C09K13/00C09K13/04C09K13/06C23F1/30C23F1/40C23F1/02H01L21/306
CPCC09K13/00C09K13/04C09K13/06C23F1/30C23F1/40C23F1/02H01L21/30604Y02E10/549
Inventor 佐佐木辽高桥秀树清水寿和中村伸宏増茂邦雄渡边晓
Owner KANTO CHEM CO INC
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