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Surface treatment method for sic substrates, sic substrate, and semiconductor production method

A surface treatment and substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor device, post-processing, etc., can solve problems such as grinding damage to SiC substrates

Active Publication Date: 2016-10-26
TOYOTA TSUSHO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to mechanical polishing, polishing damage occurs on the surface of the SiC substrate

Method used

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  • Surface treatment method for sic substrates, sic substrate, and semiconductor production method
  • Surface treatment method for sic substrates, sic substrate, and semiconductor production method
  • Surface treatment method for sic substrates, sic substrate, and semiconductor production method

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Embodiment Construction

[0048] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0049] First, refer to figure 1 The high-temperature vacuum furnace 10 used for the heat treatment of this embodiment will be described. figure 1 It is a figure explaining the outline|summary of the high temperature vacuum furnace used for the surface treatment method of this invention.

[0050] Such as figure 1 As shown, the high-temperature vacuum furnace 10 has a main heating chamber 21 and a preliminary heating chamber 22 . The main heating chamber 21 can heat a SiC substrate having at least a surface made of single crystal SiC to a temperature of 1000° C. or higher and 2300° C. or lower. The preliminary heating chamber 22 is a space for performing preliminary heating before the main heating chamber 21 heats the SiC substrate.

[0051] The main heating chamber 21 is connected to a vacuum forming valve 23 , an inert gas injection valve 24 and a vacuum gauge 25 . ...

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Abstract

When a SiC substrate (40), which has been subjected to machining, is subjected to heat treatment under a SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, in cases when latent scratches or the like are present in the SiC substrate (40), the latent scratches or the like can be removed. Accordingly, the surface of the SiC substrate (40) does not become rough, even if epitaxial growth and heat treatment are performed, and thus high-quality SiC substrates can be produced.

Description

technical field [0001] The invention mainly relates to a surface treatment method for removing latent damage of a SiC substrate. Background technique [0002] SiC is attracting attention as a new semiconductor material because it is superior in heat resistance, mechanical strength, etc. compared with Si and the like. [0003] Patent Document 1 discloses a surface treatment method for planarizing the surface of the SiC substrate. In this surface treatment method, a SiC substrate is accommodated in a storage container, and the storage container is heated while the inside of the storage container is brought under Si vapor pressure. Thereby, the SiC substrate inside the storage container is etched, and a molecularly flat SiC substrate can be obtained. [0004] Here, the SiC substrate is obtained by cutting out at a predetermined angle from an ingot made of single crystal SiC. Since the surface roughness is large in the cut out state, it is necessary to perform mechanical poli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/302C30B29/36C30B33/08H01L21/205H01L21/265
CPCC30B29/36C30B33/08H01L21/302C30B25/20H01L21/02378H01L21/02433H01L21/02529H01L21/02661H01L21/3065H01L21/02019H01L21/3247H01L29/1608H01L21/265C30B25/10C30B25/186H01L21/0475
Inventor 鸟见聪矢吹纪人野上晓
Owner TOYOTA TSUSHO
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