Gallium arsenide etching method

A gallium arsenide, chemical reaction technology, applied in the field of solar cells, can solve the problems of difficult to control the etching rate, incomplete etching, waste of raw materials, etc., and achieve the effect of easy control of the etching rate and high precision

Pending Publication Date: 2020-05-05
紫石能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the etching rate of this gallium arsenide etching method is difficult to control, and it is prone to problems of incomplete etching or waste of raw materials.

Method used

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  • Gallium arsenide etching method

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0049] Step 1: put gallium arsenide into the electrolyte solution of the electrochemical reaction cell, and the electrolyte solution includes hydrochloric acid, copper bromide and water. Wherein, the pH value of the electrolytic solution is 0.7-1, and the concentration of copper bromide is 140 g / L.

[0050] Step 2: Calculate the etching time according to the target etching amount of gallium arsenide, calculate the etching rate according to the etching time, and obtain the etching voltage value.

[0051] The electrodes are energized, the control voltage is the above etching voltage value, and the bromine gas released from the electrochemical reaction cell is collected. Gallium arsenide is etched by an electrochemical reaction.

[0052] During the electrochemical reaction, the pH value of the electrolyte and the concentration of copper bromide were detected. According to the test results, determine whether to add acid, metal bromide and water to the electrochemical reaction ce...

experiment example 2

[0056] Step 1: put gallium arsenide into the electrolyte solution of the electrochemical reaction cell, the electrolyte solution is composed of hydrochloric acid, copper bromide and water, and the pH value of the electrolyte solution is 0.7-1, and the concentration of copper bromide is 150g / L.

[0057] Step 2: Calculate the etching time according to the target etching amount of gallium arsenide, calculate the etching rate according to the etching time, and obtain the etching voltage value.

[0058] The electrodes are energized, the control voltage is the above etching voltage value, and the bromine gas released from the electrochemical reaction cell is collected. Gallium arsenide is etched by an electrochemical reaction.

[0059] During the electrochemical reaction, the pH value of the electrolyte and the concentration of copper bromide were detected. According to the test results, determine whether to add acid, metal bromide and water to the electrochemical reaction cell to ...

experiment example 3

[0063] Step 1: put gallium arsenide into the electrolyte solution of the electrochemical reaction cell, the electrolyte solution is composed of hydrochloric acid, copper bromide and water, and the pH value of the electrolyte solution is 0.7-1, and the concentration of copper bromide is 160g / L.

[0064] Step 2: Calculate the etching time according to the target etching amount of gallium arsenide, calculate the etching rate according to the etching time, and obtain the etching voltage value.

[0065] The electrodes are energized, the control voltage is the above etching voltage value, and the bromine gas released from the electrochemical reaction cell is collected. Gallium arsenide is etched by an electrochemical reaction.

[0066] During the electrochemical reaction, the pH value of the electrolyte and the concentration of copper bromide were detected. According to the test results, determine whether to add acid, metal bromide and water to the electrochemical reaction cell, so...

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PUM

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Abstract

The invention discloses a gallium arsenide etching method which comprises the steps: placing gallium arsenide in electrolyte of an electrochemical reaction tank, wherein the electrolyte comprises non-oxidizing acid, metal bromide and water; and inputting a predetermined voltage into an electrode in the electrochemical reaction tank, wherein the predetermined voltage is a voltage for keeping a predetermined etching rate when the pH value of the electrolyte and the concentration of the metal bromide are in a predetermined range. Bromide ions from the metal bromide can generate bromine gas through electrochemical reaction, and the bromine gas reacts with water to generate hypobromic acid; and gallium arsenide can react with hydrogen ions in the electrolyte after being oxidized by the hypobromic acid, and the purpose of etching the gallium arsenide in an electrochemical reaction mode is achieved. According to the gallium arsenide etching method, the etching rate of gallium arsenide can becontrolled by controlling the voltage, the etching rate is easy to control, and the control precision is high.

Description

technical field [0001] The invention relates to the field of solar cells, and more specifically, to a gallium arsenide etching method. Background technique [0002] Gallium arsenide (GaAs) is an important semiconductor material, which belongs to group III-V compound semiconductors. Gallium arsenide has a zinc blende lattice structure with a lattice constant of The melting point is 1237°C and the band gap is 1.4 electron volts. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than that of silicon and germanium, so it has been widely used in solar cells, integrated circuit substrates, infrared detectors, gamma photon detectors and other fields. [0003] When gallium arsenide is used in the field of solar cells, it needs to be etched. Etching refers to the technology of selectively etching or stripping the substrate surface or surface covering film according to the mask pattern or design...

Claims

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Application Information

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IPC IPC(8): H01L21/3063H01L31/18
CPCH01L21/30635H01L31/184Y02P70/50
Inventor 李宗鑫
Owner 紫石能源有限公司
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