Non-selective oxidation vertical cavity surface emitting laser based on secondary epitaxy technology

A technology of vertical cavity surface emission and secondary epitaxy, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., can solve problems such as AlGaAs layer cracking, affecting device performance, volume shrinkage, etc. effect of density

Inactive Publication Date: 2021-03-16
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the high Al composition of AlGaAs and H 2 There are many O reaction products, and after oxidation, a large number of voids will be formed in the AlGaAs layer with high Al composition, resulting in cracking and volume shrinkage of the oxidized AlGaAs layer, which will affect the performance of the entire device

Method used

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  • Non-selective oxidation vertical cavity surface emitting laser based on secondary epitaxy technology
  • Non-selective oxidation vertical cavity surface emitting laser based on secondary epitaxy technology
  • Non-selective oxidation vertical cavity surface emitting laser based on secondary epitaxy technology

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Embodiment 1

[0037] After adding current to the laser made by the above-mentioned preparation method, the photons generated in the multi-quantum well layer 4 will be reflected back and forth before the N-type DBR layer 3 and the P-type DBR layer 8, because the hole-shaped Al 2 o 3 The refractive index of the thin film layer 7 is smaller than that of the P-type DBR layer 8. According to the waveguide theory of light and the principle of total reflection in the light transmission process, the laser light will only be limited to the hole-shaped Al 2 o 3 There is no Al in the middle of the film layer 7 2 o 3 position of the film, eventually along the middle without Al 2 o 3 The position of the film is lased out from the upper surface. Its schematic diagram is as follows Figure 7 shown.

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Abstract

The invention discloses a non-selective oxidation vertical cavity surface emitting laser based on a secondary epitaxy technology, and belongs to the technical field of lasers. The epitaxial structureof the vertical cavity surface emitting laser with a DBR structure sequentially comprises a substrate, an N-type doped layer, an N-type DBR layer, a multi-quantum well layer, a P-type DBR layer, photoresist, an Al2O3 thin film layer, a P-type DBR layer and a P-type doped GaAs layer from bottom to top. According to the invention, the high-Al-component AlGaAs epitaxial layer with fragile stress after oxidation is replaced by the Al2O3 thin film layer by using the lateral epitaxial technology, so that the Al2O3 layer and the epitaxial layer on the Al2O3 layer are both considered, the Al2O3 layerand the epitaxial layer cannot be broken along with small vibration or external force to cause device failure, in addition, highly toxic substances such as As, As2O3 and the like cannot be generated,and environmental protection is facilitated.

Description

technical field [0001] The utility model relates to the technical field of lasers and preparations of III-V group (such as GaAs) laser materials, in particular to a non-selective oxidation vertical cavity surface-emitting laser based on secondary epitaxy technology and a preparation method thereof. Background technique [0002] Vertical-cavity surface-emitting lasers are one of the most active research topics in the current laser technology field, and they are widely used in optical communications, infrared lighting and other fields. The main structure of a vertical cavity surface emitting laser includes a substrate, an N-type doped layer, an N-type DBR, a quantum well layer, a P-type DBR, and a P-type doped layer. In order to confine the current and laser to a small aperture, one or more layers of AlGaAs epitaxial layers with high refractive index and high Al composition will be grown between the quantum well layer and the P-type DBR, and the Al composition is greater than ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/125
CPCH01S5/1082H01S5/183H01S5/18302H01S5/18313H01S5/18327
Inventor 王智勇徐晟李冲王聪聪黄瑞
Owner BEIJING UNIV OF TECH
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