Etching solution composition and etching method for copper and copper alloy

A technology of composition and etching solution, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of not obtaining shapes, etc., and achieve excellent practicability, high in-plane uniformity, and increased etching rate Effect

Inactive Publication Date: 2013-03-27
KANTO CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As above, due to the difference in etching characteristics (solubility) in the copper / copper alloy laminate film, the desired shape cannot be obtained even if a known etching solution is used.

Method used

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  • Etching solution composition and etching method for copper and copper alloy
  • Etching solution composition and etching method for copper and copper alloy
  • Etching solution composition and etching method for copper and copper alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～53

[0082] pair on glass substrate thick Cu alloy (Cu-Mg-Al), After forming a thick Cu film, a protective layer pattern was formed and dipped in the etching solution shown in Tables 1 to 4 at a liquid temperature of 30° C. for 1.5 times the appropriate etching time. Then, it was washed with water, dried, and the residue was evaluated. Moreover, the persulfuric acid solution uses LD100 produced by DuPont (referred to as KHSO 5 solution as the main component).

[0083] The results are shown in Tables 1-4. and, Figure 1 ~ Figure 3 SEM photographs of Tables 1 to 3 are shown, respectively.

[0084] [Table 1]

[0085] Evaluation results of various compositions [J.E.T.×1.5]

[0086] Cu / CuMgAl substrate

[0087]

[0088] [Table 2]

[0089] Evaluation results of various compositions [J.E.T.×1.5]

[0090] Cu / CuMgAl substrate

[0091]

[0092] [table 3]

[0093] Evaluation results of various compositions [J.E.T.×1.5]

[0094] Cu / CuMgAl substrate

[0095]

[0096] [T...

Embodiment 54

[0102] Films were formed on glass substrates thick Cu alloy (Cu-Mg-Al), Thick Cu substrates and films formed on glass substrates thick Cu alloy (Cu-Mg-Al), A protective layer pattern was formed on a thick Cu substrate, and dipped in the etching solution shown in Table 5 at a liquid temperature of 30°C, 40°C, and 50°C for 1.5 times the appropriate etching time. Then, it washed with water, dried, and evaluated the residue. Moreover, the persulfuric acid solution uses LD100 produced by DuPont (referred to as KHSO 5 solution as the main component).

[0103] The results are shown in Table 6, and the SEM photo results of Table 6 are shown in Figure 4 .

[0104] [table 5]

[0105] composition

[0106]

LD100(weight%)

HNO 3 (weight%)

h 3 PO 4 (weight%)

Example 54

11.7

3.2

8.2

[0107] [Table 6]

[0108] Evaluation results of various compositions [J.E.T.×1.5]

[0109] Cu / CuMgAl substrate

[0110]

[0111] Usi...

Embodiment 55～58

[0113] pair on glass substrate thick Cu alloy (Cu-Mg-Al), After forming a thick Cu film, a protective layer pattern was formed, and as shown in Table 7, the etchant of Example 55 was made alkaline, and the cross-sectional shape and residue when hydrochloric acid was added were evaluated. Furthermore, immersion was performed at a liquid temperature of 30° C. for a time 1.5 times the appropriate etching time. In addition, the persulfuric acid solution uses LD100 produced by DuPont (referred to as KHSO 5 solution as the main component).

[0114] The results are shown in Table 8, and the SEM photo results of Table 8 are shown in Figure 5 .

[0115] [Table 7]

[0116]various composition

[0117]

[0118] [Table 8]

[0119] Evaluation results of various compositions [J.E.T.×1.5]

[0120] Cu / CuMgAl substrate

[0121]

[0122] The cross-sectional shape of the composition of Example 55 was confirmed when the concentration of hydrochloric acid was changed under alkalin...

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PUM

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Abstract

The invention aims to provide an etching solution composition and an etching method for copper and copper alloy. A metal laminated film containing a copper layer and a copper oxide layer and/or a copper alloy layer is etched by the etching solution composition with good precision, thereby forming an excellent sectional shape, realizing excellent practicability and stability and achieving long service lifetime. The etching solution composition is used to etch the metal laminated film containing the copper layer and the copper oxide layer and/or the copper alloy layer. In addition, the etching solution composition contains 0.1-80 wt% of persulfate solution and/or persulfuric acid solution, 0.1-80 wt% of phosphoric acid and 0.1-50 wt% of nitric acid and/or sulfuric acid and is further added with chloride ions and ammonium ions, thereby making it easy to control the etching rate and the sectional shape.

Description

technical field [0001] The present invention relates to an etchant composition for etching a metal laminate film of copper and a copper alloy containing copper as a main component, which is used in the manufacture of flat panel displays and the like, and an etching method using the etchant. Background technique [0002] In the past, aluminum thin films have been used as fine wiring materials for liquid crystal display devices. However, copper or copper have not been used until recently in order to form line widths of several micrometers or less for driving transistor electrodes (move transistor electrodes) and fine patterns of flat panel displays. Copper alloy with copper as the main component. For this reason, the etching technology for copper thin films with a line width of several micrometers or less, which is suitable for flat plate manufacturing, has been limited until now. [0003] In the case of using a copper thin film as an electrode, copper is not used as a single...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18H01L21/3213
CPCC23F1/18H01L21/3213
Inventor 高桥 秀树
Owner KANTO CHEM CO INC
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