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Cleaning agent for polishing wafer

A cleaning agent and wafer technology, applied in organic cleaning compositions, electrical components, non-ionic surface active compounds, etc., can solve the problems of inability to meet wafer polishing and cleaning requirements, consumption of large chemical reagents, and high manufacturing costs, and achieve cost Low, improved cleaning ability, the effect of reducing cleaning cost

Inactive Publication Date: 2008-10-22
DALIAN SANDAAOKE CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, most of the cleaning methods for wafers are RCA cleaning method proposed by Kern and Puotinen. It consumes a lot of chemical reagents such as acids, alkalis, and oxidants, which leads to high manufacturing costs and serious environmental pollution; although the RCA cleaning method has a good cleaning effect on wafers with a line width of 0.13 μm or larger, it has been unable to meet the requirements of line width. Wafer polishing and cleaning requirements with a wide size of 90nm or even smaller

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A cleaning solution for wafer polishing is characterized in that it consists of surfactant, organic base, organic base, pH regulator, penetrating agent, chelating agent and pure water.

[0031] Its raw materials and weight percent are as follows:

[0032] Surfactant 5%-15%, organic base 0.01%-10%, pH regulator 5%-20%, penetrant 2%-5%, chelating agent 0.1%-2%, pure water balance.

[0033] Each raw material is selected within its weight range, and the total weight is 100%.

[0034] The surfactant is at least one of fatty alcohol polyoxyethylene ether and fatty alcohol polyoxyethylene polyoxypropylene ether, and its general molecular formula is R 1 O(C 2 h 4 O) m , R 2 O(C 2 h 4 O) m (C 3 h 6 O) n H, where R 1 and R 2 It is a C10-C18 alkyl group, m and n represent the polymerization number of oxirane group and propylene oxide respectively, and the polymerization number is 3-20.

[0035] Described organic base is tetramethyl ammonium hydroxide, tetraethyl ammo...

Embodiment 2

[0050] Raw materials and weight percentages used are as follows:

[0051] Pluronic Surfactant 10%

[0052] Tetramethylammonium Hydroxide 0.5%

[0053] Triethanolamine 10%

[0054] JFC Penetrant 3%

[0055] Chelating agent 0.5%

[0056] Pure water balance.

[0057] The sum of the weight percentages of each raw material is 100%, and the cleaning method and effect are the same as in Example 1.

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PUM

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Abstract

The invention provides a cleaning agent for wafer polishing, which is simple in preparation method and low in cost, doest not pollute the environment and can meet the polishing and cleaning requirements of a wafer with a line width dimension of 90 nanometers or less than 90 nanometers. The compositions by weight percentage of raw materials are: 5 to 15 percent of surface active agent, 0.01 to 10 percent of organic alkali, 5 to 20 percent of pH regulator, 2 to 5 percent of osmotic agent, 0.1 to 2 percent of chelon, the balance being pure water.

Description

Technical field: [0001] The invention relates to a cleaning agent for wafer polishing technology, in particular to a cleaning agent for wafer polishing with simple preparation method, low cost, no pollution to the environment, and meeting the requirements of wafer polishing and cleaning with a line width of 90nm or even smaller. agent. Background technique: [0002] With the continuous development of ultra-large-scale integrated circuits, the line width of integrated circuits continues to decrease, and the diameter of wafers continues to increase. At present, 90nm wafers have begun to become the mainstream in my country, and there is a tendency to develop towards 65nm and 45nm. Therefore, The quality requirements for wafers are also getting higher and higher. Since the surface state and cleanliness of the wafer are one of the most important factors affecting the quality and reliability of the device, the wafer substrate must be polished during the wafer manufacturing process...

Claims

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Application Information

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IPC IPC(8): C11D1/66C11D3/30H01L21/302
Inventor 侯军吕冬
Owner DALIAN SANDAAOKE CHEM
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