Method for forming metal wiring groove
A metal wiring and trench technology, applied in the field of semiconductor manufacturing, can solve the problems of critical size gap, performance degradation of semiconductor devices, and difficulty in controlling the etching size, so as to achieve the effect of improving performance and easing the etching rate
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[0018] In the present invention, the process flow of performing an etching process to form metal wiring grooves in the process of forming metal wiring is as follows: step S11 is performed to provide a semiconductor substrate, and an interlayer dielectric layer, a dielectric layer, and a semiconductor substrate are sequentially formed on the semiconductor substrate. Bottom anti-reflective layer, low temperature silicon oxide layer and patterned photoresist layer.
[0019] The material of the interlayer dielectric layer is silicon oxide or silicon oxynitride, which is used for isolation between semiconductor devices.
[0020] The dielectric layer includes a silicon carbonitride layer with a thickness of 300 angstroms, a low dielectric constant dielectric layer with a thickness of 1550 angstroms, and a silicon oxide protection layer with a thickness of 500 angstroms, which are sequentially located on the interlayer dielectric layer.
[0021] The bottom antireflection layer has a ...
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