Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching

A technology of ion beam etching and ion implantation, which is applied in the direction of light guides, optics, optical components, etc., and can solve the problem of making less ridge-shaped optical waveguides

Inactive Publication Date: 2011-01-12
SHANDONG UNIV
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  • Application Information

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Problems solved by technology

Strip optical waveguides, especially ridge optical waveguides, have aroused widespread interest because they can better confine light transmission. So far, in semiconductor materials (SiO 2 , InP, GaAs, etc.) The research on the ridge optical waveguide on the cry

Method used

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  • Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching
  • Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching
  • Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching

Examples

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[0017] Example 1:

[0018] 1) Sample processing: Select the sample KTP crystal, Z-cut, size 10mm×8mm, thickness 1.5mm, surface optically polished; the sample is washed with acetone, deionized water and alcohol, and then prepared for ion implantation;

[0019] 2) Ion implantation: Put the sample processed in step 1) in the target chamber of the accelerator and evacuate to 10 -4 Pascal level, ion implantation, the selected implantation conditions are: implanted ions: carbon ions, ion energy: 6.0MeV (mega electron volts), implantation dose: 5×10 13 Ions per square centimeter, and the ion beam current is 20 nanoamperes. The sample is ion implanted to form a planar optical waveguide, and the planar optical waveguide is washed with acetone, deionized water and alcohol successively.

[0020] 3) Preparation of photoresist mask

[0021] Glue homogenization: Use a high-speed homogenizer to coat photoresist on the cleaned KTP crystal planar optical waveguide at a speed of 5000 revolutions per mi...

Example Embodiment

[0026] Example 2:

[0027] 1) Sample processing: Select the sample KTP crystal, Z-cut, size 10mm×8mm, thickness 1.5mm, surface optically polished; the sample is washed with acetone, deionized water and alcohol, and then prepared for ion implantation;

[0028] 2) Ion implantation: Place the sample processed in step 1) in the target chamber of the ion implanter, and vacuum to 10 -4 Pascal level, ion implantation; select implantation conditions: implanted ions: helium ions, ion energy: 500keV, implantation dose: 1×10 15 Ions per square centimeter, and the ion beam current is 100 nanoamperes. The sample is ion implanted to form a planar optical waveguide, and the planar optical waveguide is washed with acetone, deionized water and alcohol successively.

[0029] 3. Preparation of photoresist mask

[0030] Glue homogenization: Use a high-speed homogenizer to coat photoresist on the cleaned KTP crystal planar optical waveguide at a speed of 5000 revolutions per minute and bake 2 minutes at 1...

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Abstract

The invention discloses a method for preparing a KTP rib optical waveguide by combining ion implantation with ion beam etching, and belongs to the technical field of preparation of photoelectronic devices. The preparation method comprises the following steps of: optically polishing the surface and two opposite end faces of a z-cut KTP crystal with the dimension of 10mm*10mm*1mm; cleaning samples by using acetone, deionized water and alcohol, and performing ion implantation to obtain a planar optical waveguide; coating a BP218 photoresist on the samples in a spinning mode, exposing a mask plate, and developing and hardening to form a bar-shaped mask of the photoresist; putting the samples into a target chamber of an ion beam etcher, vacuumizing to reach the pressure of 10<-4>Pa and performing ion beam etching; and cleaning the photoresist mask to prepare the rib optical waveguide. The prepared rib optical waveguide has the advantages of capacity of well keeping the nonlinear optical property of the KTP crystal, and potential application value in the preparation of optical switches and optical modulators and in other aspects.

Description

technical field [0001] The invention relates to a method for preparing a KTP ridge optical waveguide by combining ion implantation and ion beam etching, and belongs to the technical field of optoelectronic device preparation. Background technique [0002] Optical waveguides are small and compact, and can easily realize effective modulation of light waves, which is the basis for manufacturing optoelectronic devices. Because nonlinear optical crystal materials have important application value in the transmission and modulation of optical signals, it is very important to prepare optical waveguides on nonlinear optical crystal materials. KTP crystal is an important nonlinear optical crystal. Its nonlinear optical coefficient is 20 to 30 times higher than that of KDP. It can achieve phase matching at room temperature and is insensitive to changes in temperature and angle. It is 0.35 It has good light transmission performance in the range of ~4.5 microns, excellent mechanical pro...

Claims

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Application Information

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IPC IPC(8): G02B6/122G02B6/134G02B6/136
Inventor 赵金花黄庆刘鹏管婧王雪林
Owner SHANDONG UNIV
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