Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching

A technology of ion beam etching and ion implantation, which is applied in the direction of light guides, optics, optical components, etc., and can solve the problem of making less ridge-shaped optical waveguides

Inactive Publication Date: 2011-01-12
SHANDONG UNIV
View PDF3 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Strip optical waveguides, especially ridge optical waveguides, have aroused widespread interest because they can better confine light transmission. So far, in semiconductor materials (SiO 2 , InP, GaAs, etc.) The research on the ridge optical waveguide on the crystal material is relatively mature, and the ridge optical waveguide on the crystal material is relatively seldom, and the ridge optical waveguide is prepared on the KTP crystal by combining ion implantation and ion beam etching. research has not yet been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching
  • Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching
  • Method for preparing KTP rib optical waveguide by combining ion implantation with ion beam etching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1) Sample treatment: select the sample KTP crystal, Z-cut, the size is 10 mm × 8 mm, the thickness is 1.5 mm, the surface is optically polished; the sample is cleaned by acetone, deionized water and alcohol, and then prepared for ion implantation;

[0019] 2) Ion implantation: put the sample processed in step 1) in the accelerator target chamber, and vacuumize to 10 -4 Pascal level, ion implantation, the selected implantation conditions are: implanted ions: carbon ions, ion energy: 6.0MeV (megaelectron volts), implantation dose: 5×10 13 Ions / cm2, the ion beam current is 20 nanoamperes. The sample is implanted with ions to form a planar optical waveguide, and the planar optical waveguide is cleaned with acetone, deionized water and alcohol successively.

[0020] 3) Preparation of photoresist mask

[0021] Coating: Use a high-speed coating machine to coat photoresist on the cleaned KTP crystal planar optical waveguide at a speed of 5000 rpm and pre-bake at 120 degrees C...

Embodiment 2

[0027] 1) Sample treatment: select the sample KTP crystal, Z-cut, the size is 10 mm × 8 mm, the thickness is 1.5 mm, the surface is optically polished; the sample is cleaned by acetone, deionized water and alcohol, and then prepared for ion implantation;

[0028] 2) Ion implantation: put the sample treated in step 1) in the target chamber of the ion implanter, and vacuumize to 10 -4 Pascal level, perform ion implantation; select the implantation conditions as follows: implanted ions: helium ions, ion energy: 500keV, implantation dose: 1×10 15 Ions / cm2, the ion beam current is 100 nanoamperes. The sample is implanted with ions to form a planar optical waveguide, and the planar optical waveguide is cleaned with acetone, deionized water and alcohol successively.

[0029] 3. Photoresist Mask Preparation

[0030] Coating: Use a high-speed coating machine to coat photoresist on the cleaned KTP crystal planar optical waveguide at a speed of 5000 rpm and pre-bake at 120 degrees Cels...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a KTP rib optical waveguide by combining ion implantation with ion beam etching, and belongs to the technical field of preparation of photoelectronic devices. The preparation method comprises the following steps of: optically polishing the surface and two opposite end faces of a z-cut KTP crystal with the dimension of 10mm*10mm*1mm; cleaning samples by using acetone, deionized water and alcohol, and performing ion implantation to obtain a planar optical waveguide; coating a BP218 photoresist on the samples in a spinning mode, exposing a mask plate, and developing and hardening to form a bar-shaped mask of the photoresist; putting the samples into a target chamber of an ion beam etcher, vacuumizing to reach the pressure of 10<-4>Pa and performing ion beam etching; and cleaning the photoresist mask to prepare the rib optical waveguide. The prepared rib optical waveguide has the advantages of capacity of well keeping the nonlinear optical property of the KTP crystal, and potential application value in the preparation of optical switches and optical modulators and in other aspects.

Description

technical field [0001] The invention relates to a method for preparing a KTP ridge optical waveguide by combining ion implantation and ion beam etching, and belongs to the technical field of optoelectronic device preparation. Background technique [0002] Optical waveguides are small and compact, and can easily realize effective modulation of light waves, which is the basis for manufacturing optoelectronic devices. Because nonlinear optical crystal materials have important application value in the transmission and modulation of optical signals, it is very important to prepare optical waveguides on nonlinear optical crystal materials. KTP crystal is an important nonlinear optical crystal. Its nonlinear optical coefficient is 20 to 30 times higher than that of KDP. It can achieve phase matching at room temperature and is insensitive to changes in temperature and angle. It is 0.35 It has good light transmission performance in the range of ~4.5 microns, excellent mechanical pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02B6/122G02B6/134G02B6/136
Inventor 赵金花黄庆刘鹏管婧王雪林
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com