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Additive for preparing porous pyramid structure by secondary texturing of monocrystalline silicon wafer and application thereof

A technology of pyramid structure and single crystal silicon wafer, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high cost and complex process, achieve surface tension reduction, simple process, and improve microstructure uniformity Effect

Active Publication Date: 2020-06-09
CHANGZHOU SHICHUANG ENERGY CO LTD
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Problems solved by technology

[0006] The above-mentioned methods for preparing the porous pyramid structure all have the defects of high cost and complicated process, so it is necessary to further find a new preparation method for the porous pyramid structure of single crystal silicon wafers.

Method used

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  • Additive for preparing porous pyramid structure by secondary texturing of monocrystalline silicon wafer and application thereof
  • Additive for preparing porous pyramid structure by secondary texturing of monocrystalline silicon wafer and application thereof

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Embodiment Construction

[0024] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0025] Such as figure 1 with figure 2 As shown, the present invention provides a kind of method that monocrystalline silicon chip prepares porous pyramid structure, first monocrystalline silicon chip is carried out one-time texturing, makes the monocrystalline silicon chip surface form pyramid structure; The monocrystalline silicon wafer after texturing is subjected to secondary texturing to form a porous pyramid structure on the surface of the monocrystalline silicon wafer;

[0026] The concrete steps of described secondary texturing include:

[0027] 1) Preparation of additives: 0.1% to 10% of sodium polystyrene sulfonate, 2% to 20% of polyethylene gl...

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Abstract

The invention discloses an additive for preparing a porous pyramid structure by secondary texturing of a monocrystalline silicon wafer. The additive comprises the following components in percentage bymass: 0.1-10% of sodium polystyrenesulfonate, 2-20% of polyethylene glycol, 1-5% of a fluorocarbon surfactant and 20-30% of inorganic salt, with the balance being water. The additive disclosed by theinvention is added into texturing liquid for secondary texturing of the monocrystalline silicon wafer, so the porous pyramid structure can be formed on the surface of the monocrystalline silicon wafer. The method for preparing the porous pyramid structure of the monocrystalline silicon wafer is lower in cost and simpler in process.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to an additive for preparing a porous pyramid structure by secondary texturing of a single crystal silicon wafer and an application thereof. Background technique [0002] The existing monocrystalline silicon wafers are often prepared with a pyramid-structured texture. In order to further improve the light-trapping effect of the textured surface, the porous pyramid structure has become a new research direction. [0003] The Chinese patent with the application number 201110252280.1 discloses a method for preparing a porous pyramid-shaped silicon surface light-trapping structure for solar cells, which mainly involves catalytic etching of noble metal nanoparticles on a single-crystal silicon wafer with a pyramid structure after one-time texturing treatment to form a porous pyramid structure on the surface of the single crystal silicon wafer. [0004] The Chinese patent with the application...

Claims

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Application Information

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IPC IPC(8): C30B33/10C30B29/06H01L31/0236
CPCC30B29/06C30B33/10H01L31/02363
Inventor 胡聿明杨洋章圆圆
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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