Additive for preparing porous pyramid structure by secondary texturing of monocrystalline silicon wafer and application thereof

A technology of pyramid structure and single crystal silicon wafer, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high cost and complex process, achieve surface tension reduction, simple process, and improve microstructure uniformity Effect

Active Publication Date: 2020-06-09

CHANGZHOU SHICHUANG ENERGY CO LTD

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[0006] The above-mentioned methods for preparing the porous pyramid structure all have the defects of high cost and complicated pro...

Abstract

The invention discloses an additive for preparing a porous pyramid structure by secondary texturing of a monocrystalline silicon wafer. The additive comprises the following components in percentage bymass: 0.1-10% of sodium polystyrenesulfonate, 2-20% of polyethylene glycol, 1-5% of a fluorocarbon surfactant and 20-30% of inorganic salt, with the balance being water. The additive disclosed by theinvention is added into texturing liquid for secondary texturing of the monocrystalline silicon wafer, so the porous pyramid structure can be formed on the surface of the monocrystalline silicon wafer. The method for preparing the porous pyramid structure of the monocrystalline silicon wafer is lower in cost and simpler in process.

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Polycrystalline material growthAfter-treatment details +2

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Active agentSurface-active agents +11

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[0024] The specific embodiments of the present invention will be further described below in conjunction with the drawings and embodiments. The following embodiments are only used to illustrate the technical solutions of the present invention more clearly, and cannot be used to limit the protection scope of the present invention.

[0025] Such as figure 1 with figure 2 As shown, the present invention provides a method for preparing a porous pyramid structure from a monocrystalline silicon wafer. The monocrystalline silicon wafer is first textured to form a pyramid structure on the surface of the monocrystalline silicon wafer; The monocrystalline silicon wafers after texturing are subjected to secondary texturing to form a porous pyramid structure on the surface of the monocrystalline silicon wafers;

[0026] The specific steps of the secondary texturing include:

[0027] 1) Preparation of additives: the mass percentage of 0.1%-10% sodium polystyrene sulfonate, 2%-20% polyethylene glycol, 1%-5% fluorocarbon surfactant, 20%- 30% of the inorganic salt is added to the remaining water, mixed evenly to form an additive;

[0028] The polyethylene glycol is selected from one or more of polyethylene glycol-200, polyethylene glycol-300, and polyethylene glycol-800;

[0029] The inorganic salt is selected from NaCl, Na 2 CO 3 , KCl, K 2 CO 3 One or more of;

[0030] 2) Preparation of texturing liquid: add the additives made in step 1) to the alkali solution and mix uniformly to form a texturing liquid; the mass ratio of the additives to the alkali solution is 1~3:100; the alkali solution is 0.5~3.0wt % Sodium hydroxide or potassium hydroxide aqueous solution;

[0031] 3) Immerse the monocrystalline silicon wafers after primary texturing into the texturing liquid obtained in step 2) for secondary texturing. The texturing temperature of the secondary texturing is 72~79℃, and the texturing time of the secondary texturing It is 120~150s.

[0032] In the above step 1), the preferred formulation of the additive is: 2% to 3% sodium polystyrene sulfonate, 5% to 8% polyethylene glycol, 2% to 3% fluorocarbon Surfactant and 20% to 25% of inorganic salt are added to the remaining water and mixed uniformly to form additives.

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Description & Claims & Application Information

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Method for preparing boron alkene with high crystallinity and uniform thickness by hydrochloric acid assisted liquid phase oxidation

PendingCN113023742ASimple and mild reaction conditionslow cost method

Owner:SHAANXI NORMAL UNIV

Classification and recommendation of technical efficacy words

low cost method
Simple process

Method for preparing boron alkene with high crystallinity and uniform thickness by hydrochloric acid assisted liquid phase oxidation

PendingCN113023742ASimple and mild reaction conditionslow cost method

Owner:SHAANXI NORMAL UNIV

Additive for preparing porous pyramid structure by secondary texturing of monocrystalline silicon wafer and application thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

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Description & Claims & Application Information

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