Photoresist stripping liquid

A technology of stripping liquid and photoresist, which is applied in the field of cleaning agents, can solve problems such as grid structure damage, serious environmental pollution, and dangerous chemical reagents, and achieve the effects of high-efficiency degreasing ability, low corrosion rate, and low volatility

Inactive Publication Date: 2008-10-29
DALIAN SANDAAOKE CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

1. The cleaning solution is easy to corrode the wafer base material and metal wiring, resulting in damage to the gate structure;
2. The amount of residual metal ions after cleaning exceeds the standard requirements, which may easily cause metal ion pollution on the wafer surface;
3. The main components are strong acid, hydrogen peroxide and fluoride, all of which are dangerous chemical reagents. During the cleaning operation, not only the health of the operator is endangered, but also the discharged waste liquid seriously pollutes the environment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

Embodiment 2

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Abstract

The invention discloses a cleaning agent which has simple preparation method, low cost and low corrosion rate on substrate material and metallic wiring, and no pollution on environment and is used for removing the residues of photoresist. According to the weight percentage, the cleaning agent comprises the following raw materials: 1%-15% of surfactant, 5%-40% of organic amine, 5%-30% of organic solvent, 0.1%-5% of chelating agent, 0.01%-5% of corrosion inhibitor and residual quantity of pure water.

Description

Photoresist Stripper Technical field: The invention relates to a cleaning agent, in particular to a stripping solution used in the manufacturing process of integrated circuits (IC) and ultra-large-scale integrated circuits (ULSI) for stripping photoresist after etching process. Background technique: In the manufacturing process of integrated circuits (ICs) and ultra-large-scale integrated circuits (ULSIs), it is a very important process to use photoresist to form a conductive layer on a wafer. Generally, a photoresist is evenly applied on the insulating film or metal film, and a conductive layer image is formed on the photoresist after exposure and development, and then the conductive layer image is transferred to the surface layer of the wafer through an etching process. After the conductive layer on the surface of the wafer is formed, the photoresist used as the etching barrier layer needs to be removed. At present, the wet process is usually used to remove photoresist,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 侯军吕冬
Owner DALIAN SANDAAOKE CHEM
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