Photoresist leftover cleaning agent

A residue and cleaning agent technology, applied in the field of cleaning agents, can solve problems affecting the quality of integrated circuits, etc., and achieve the effects of low toxicity, no pollution to the environment, and high-efficiency degreasing ability

Active Publication Date: 2008-10-29
DALIAN SANDAAOKE CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there are photoresist residues, metal ions and other pollutants on the wafer surface after dry etching and ashing processes, which seriously affect the quality of integrated circuits.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Raw materials and weight percentages are as follows:

[0037] Surfactant 1%-15%, ammonium fluoride salt 0.01%-5%, organic sulfonic acid 5%-20%, organic solvent 5%-20%, penetrant 1%-5%, nitrogen-containing carboxylic acid 0.1% ~5%, corrosion inhibitor 0.01%~5%, pure water balance. Each raw material is selected within its weight range, and the total weight is 100%.

[0038] Described surfactant is block copolymer of polyethylene oxide, polypropylene oxide, ethylene oxide, propylene oxide, in the hydrophilic polymer that adds alkyl to obtain in described block copolymer at least one of .

[0039] The ammonium fluoride salt is at least one of ammonium fluoride, ammonium difluoride, tetramethylammonium fluoride, tetrabutylammonium fluoride, triethanol ammonium fluoride, and methyldiethanol ammonium fluoride.

[0040] The organic sulfonic acid is at least one of methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, p-toluenesulfonic acid and dodecylbenzenesulfon...

Embodiment 2

[0050] Raw materials and weight percentages are as follows:

[0051] Pluronic Surfactant 5%

[0052] Ammonium Fluoride 0.5%

[0053] p-toluenesulfonic acid 10%

[0054] Organic solvent 10%

[0055] JFC Penetrant 2%

[0056] EDTA 0.5%

[0057] Citric acid 0.05%

[0058] Pure water balance.

[0059] The total weight is 100%.

[0060] Cleaning method is the same as embodiment 1, and cleaning effect is better than embodiment 1.

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PUM

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Abstract

The invention discloses a cleaning agent which has simple preparation method, low corrosion rate on substrate material and metallic wiring, and no pollution on environment and is used for removing the residues of photoresist after processes of dry corrosion and cineration. According to the weight percentage, the cleaning agent comprises the following the raw materials: 1%-15% of surfactant, 0.01%-5% of ammonium salt fluoride, 5%-20% of organic sulfonic acid, 5%-20% of organic solvent, 1%-5% of penetrant, 0.1%-5% of carboxylic acids containing nitrogen, 0.01%-5% of corrosion inhibitor and residual quantity of pure water.

Description

Technical field: [0001] The invention relates to a cleaning agent, especially a cleaning agent used in the manufacturing process of integrated circuits (IC) and ultra-large-scale integrated circuits (ULSI) to remove photoresist residues after dry etching and ashing processes . Background technique: [0002] In the manufacturing process of integrated circuits (ICs) and ultra-large-scale integrated circuits (ULSIs), it is a very important process to use photoresists to form conductive layer patterns on wafers. Generally, the photoresist is evenly applied on the insulating film or metal film, and after exposure and development, a conductive layer image is formed on the photoresist, and then the photoresist is used as a mask to etch the insulating film or metal film. To form a conductive layer on the wafer, and finally remove the photoresist. At present, plasma dry etching and ashing processes are usually used to process photoresist masks. However, during the dry etching and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 侯军吕冬
Owner DALIAN SANDAAOKE CHEM
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