Photoresist leftover cleaning agent

Abstract

The invention discloses a cleaning agent which has simple preparation method, low corrosion rate on substrate material and metallic wiring, and no pollution on environment and is used for removing the residues of photoresist after processes of dry corrosion and cineration. According to the weight percentage, the cleaning agent comprises the following the raw materials: 1%-15% of surfactant, 0.01%-5% of ammonium salt fluoride, 5%-20% of organic sulfonic acid, 5%-20% of organic solvent, 1%-5% of penetrant, 0.1%-5% of carboxylic acids containing nitrogen, 0.01%-5% of corrosion inhibitor and residual quantity of pure water.

Description

Technical field: [0001] The invention relates to a cleaning agent, especially a cleaning agent used in the manufacturing process of integrated circuits (IC) and ultra-large-scale integrated circuits (ULSI) to remove photoresist residues after dry etching and ashing processes . Background technique: [0002] In the manufacturing process of integrated circuits (ICs) and ultra-large-scale integrated circuits (ULSIs), it is a very important process to use photoresists to form conductive layer patterns on wafers. Generally, the photoresist is evenly applied on the insulating film or metal film, and after exposure and development, a conductive layer image is formed on the photoresist, and then the photoresist is used as a mask to etch the insulating film or metal film. To form a conductive layer on the wafer, and finally remove the photoresist. At present, plasma dry etching and ashing processes are usually used to process photoresist masks. However, during the dry etching and a...

AI Technical Summary

Problems solved by technology

Therefore, there are photoresist residues, metal ions and other pollutants on the wafer surface after dry etching and ashing processes, which seriously affect the quality of integrated circuits.