Additives for Porous Pyramid Structure Prepared by Secondary Texturing of Single Crystal Silicon Wafer and Its Application

A technology of pyramid structure and single crystal silicon wafer, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high cost and complex process, and achieve the effect of reducing surface tension, simple process and small bubbles

Active Publication Date: 2021-06-25
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The above-mentioned methods for preparing the porous pyramid structure all have the defects of high cost and complicated process, so it is necessary to further find a new preparation method for the porous pyramid structure of single crystal silicon wafers.

Method used

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  • Additives for Porous Pyramid Structure Prepared by Secondary Texturing of Single Crystal Silicon Wafer and Its Application
  • Additives for Porous Pyramid Structure Prepared by Secondary Texturing of Single Crystal Silicon Wafer and Its Application

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Embodiment Construction

[0024] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0025] Such as figure 1 and figure 2 As shown, the present invention provides a kind of method that monocrystalline silicon chip prepares porous pyramid structure, first monocrystalline silicon chip is carried out one-time texturing, makes the monocrystalline silicon chip surface form pyramid structure; The monocrystalline silicon wafer after texturing is subjected to secondary texturing to form a porous pyramid structure on the surface of the monocrystalline silicon wafer;

[0026] The concrete steps of described secondary texturing comprise:

[0027] 1) Preparation of additives: 0.1% to 10% of sodium polystyrene sulfonate, 2% to 20% of polyethylene gl...

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Abstract

The invention discloses an additive for preparing a porous pyramid structure by secondary texturing of a single crystal silicon wafer. The mass percent content of each component is: sodium polystyrene sulfonate 0.1% to 10%, polyethylene glycol 2% ~20%, fluorocarbon surfactant 1%~5%, inorganic salt 20%~30%, and the balance is water. Adding the additive of the present invention to the texturizing liquid for the secondary texturing of the monocrystalline silicon wafer can form a porous pyramid structure on the surface of the monocrystalline silicon wafer. Moreover, the method for preparing the porous pyramid structure of the single crystal silicon chip of the present invention has lower cost and simpler process.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to an additive for preparing a porous pyramid structure by secondary texturing of a single crystal silicon wafer and an application thereof. Background technique [0002] The existing monocrystalline silicon wafers are often prepared with a pyramid-structured texture. In order to further improve the light-trapping effect of the textured surface, the porous pyramid structure has become a new research direction. [0003] The Chinese patent with the application number 201110252280.1 discloses a method for preparing a porous pyramid-shaped silicon surface light-trapping structure for solar cells, which mainly involves catalytic etching of noble metal nanoparticles on a single-crystal silicon wafer with a pyramid structure after one-time texturing treatment to form a porous pyramid structure on the surface of the single crystal silicon wafer. [0004] The Chinese patent with the application...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10C30B29/06H01L31/0236
CPCC30B29/06C30B33/10H01L31/02363
Inventor 胡聿明杨洋章圆圆
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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