Etching solution composition and preparation method thereof

A technology of composition and etching solution, which is applied in the field of etching, can solve the problems of high production cost, etching residue, short shelf life, etc., and achieve the effect of low cost, small line width loss difference, and not easy to etch broken lines

Active Publication Date: 2022-03-29
SHENZHEN CAPCHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

High-concentration hydrogen peroxide can solve the problem of etching residue, but because it is easy to decompose, the shelf life is short, which further increases the production cost

Method used

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  • Etching solution composition and preparation method thereof
  • Etching solution composition and preparation method thereof
  • Etching solution composition and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0028] In the first embodiment of the method for preparing the etching solution composition of the present invention (hereinafter referred to as "the first preparation scheme"), the following components are added in order to prepare according to the ratio: add hydrogen peroxide in the preparation container, and then add the inorganic acid , then add a compound with both amine and alcohol groups, then add a pH regulator, then add an organic acid or amino acid, then add a hydrogen peroxide stabilizer, then add a metal ion chelating agent, and finally mix well; if there is an etching inhibitor, then Add etch inhibitor after adding hydrogen peroxide stabilizer. That is, in the first formulation scheme, the compound having both an amine group and an alcohol group is added immediately after the mineral acid.

[0029] In the second embodiment of the method for preparing the etching solution composition of the present invention (hereinafter referred to as "the second preparation schem...

Embodiment 1-4 and comparative example 1-6

[0042] I. the preparation and test result of the etching solution composition of embodiment 1-4 and comparative example 1-6

[0043] Table 1 shows the composition content and preparation sequence of the etching solution compositions of Examples 1-4 and Comparative Examples 1-6 and the acidity of the obtained etching solution compositions. As shown in Table 1, the etching solution composition of Example 1 was prepared according to the first preparation scheme. Specifically, add 73g deionized water to a 200mL beaker, then add 15g hydrogen peroxide, then add 2g phosphoric acid, then add 3g ethanolamine, then add 2g PBTC, then add 1g glycine, then add 0.5g glycerol, then add 1.5g Methyl tetrazole, 2g of EDTA was finally added, and the components were mixed uniformly to obtain the etching solution composition of Example 1.

Embodiment 2

[0044] As shown in Table 1, the etching solution composition of Example 2 was prepared according to the second preparation scheme. Specifically, add 73g of deionized water to a 200mL beaker, then add 15g of hydrogen peroxide, then add 2g of phosphoric acid, then add 2g of PBTC, then add 1g of glycine, then add 0.5g of glycerol, then add 1.5g of methyl tetrazole, Then 2g of EDTA was added, and finally 3g of ethanolamine was added, and all components were mixed uniformly to obtain the etching solution composition of Example 2.

[0045] As shown in Table 1, the etching solution compositions of Comparative Examples 1-6 were prepared according to the first preparation scheme, that is, the preparation sequence was the same as that of Example 1, except that the addition amount of one component was changed for each Comparative Example. Specifically, the amount of ethanolamine added in Comparative Example 1 was 6g, the amount of ethanolamine added in Comparative Example 2 was 1g, the a...

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PUM

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Abstract

The invention relates to the technical field of etching, and provides an etching liquid composition. The cleaning agent comprises the following components in percentage by weight: 10-20% of hydrogen peroxide, 0.5-4% of inorganic acid, 1-4% of a compound with both amino and alcohol groups, 1-5% of a pH regulator, 1-5% of organic acid or amino acid, 1-5% of a metal ion chelating agent, 0.1-2% of a hydrogen peroxide stabilizer and the balance of water. And has a first acidity and a second acidity. The quality guarantee period of the etching liquid composition can reach one month, etching residues are avoided, etching broken lines are not prone to being generated, copper and copper alloy films of advanced-generation panels can be effectively etched, and the etching liquid composition can be used for etching transparent conductive films in panel display devices. The etching liquid composition can be prepared by two different preparation schemes, the shelf life of the obtained etching liquid composition can reach one month, but the line width loss difference of the etching liquid composition prepared by the first preparation scheme is obviously superior to that of the etching liquid composition prepared by the second preparation scheme.

Description

technical field [0001] The invention relates to the technical field of etching, in particular to an etching solution composition and a preparation method thereof. Background technique [0002] In today's microcircuit manufacturing processes such as semiconductor chips (ICs), organic light-emitting diodes (OLEDs), and thin-film transistor liquid crystal displays (TFT-LCDs), the Array process generally goes through the following processes: 1. Forming gates and scanning lines ; 2. Form gate insulating layer and amorphous silicon island (a-Si island); 3. Form source / drain (S / D) and channel (Channel); 4. Form protective insulating layer (Passivation) and Via hole (Via); 5. Forming a transparent pixel electrode. The above is the 5Mask process in the Array process, and the 4Mask process is to combine the amorphous silicon semiconductor layer and the source / drain metal layer into a Mask process. Each Mask process has to go through steps such as film formation, coating, exposure, d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18
CPCC23F1/18
Inventor 包成鄢艳华赵大成
Owner SHENZHEN CAPCHEM TECH
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