Novel IGZO (indium gallium zinc oxide) etching liquid for panel display array process

An array manufacturing process and flat panel display technology, which is applied in the direction of surface etching composition, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low etching rate, easy residue, insufficient side engraving, etc., and achieve excellent etching accuracy, Good etching effect and high etching rate

Inactive Publication Date: 2019-03-08
SUZHOU BOYANG CHEM
View PDF18 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Using the above-mentioned published patent to etch the new IGZO material containing four elements has defects such as low etching rate, insufficient side engraving, and easy residue, which cannot meet the mass production requirements in the actual use process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel IGZO (indium gallium zinc oxide) etching liquid for panel display array process
  • Novel IGZO (indium gallium zinc oxide) etching liquid for panel display array process
  • Novel IGZO (indium gallium zinc oxide) etching liquid for panel display array process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Ratio of each raw material:

[0023] Sulfuric acid 5%, nitric acid 2%, acetic acid 2%, fluoride 0.5%, butanol random polyether BPE1500 (surfactant) 500ppm and the balance ultrapure water.

[0024] Specific preparation method:

[0025] Under normal temperature and pressure, add the raw materials of the formula quantity into the mixing kettle in turn; mix to a uniform and stable aqueous solution; filter with a filter, and then fill it into the designated packaging container.

Embodiment 2

[0027] Ratio of each raw material:

[0028] Sulfuric acid 5%, nitric acid 5%, acetic acid 5%, fluoride 0.1%, isomeric decanol ether XP-70 (surfactant) 100ppm and the balance ultrapure water.

[0029] Specific preparation method:

[0030] Under normal temperature and pressure, add the raw materials of the formula quantity into the mixing kettle in turn; mix to a uniform and stable aqueous solution; filter with a filter, and then fill it into the designated packaging container.

Embodiment 3

[0032] Ratio of each raw material:

[0033] Sulfuric acid 10%, nitric acid 10%, acetic acid 10%, fluoride 0.1%, glycerol random polyether GPE3000 (surfactant) 900ppm and balance ultrapure water.

[0034] Specific preparation method:

[0035] Under normal temperature and pressure, add the raw materials of the formula quantity into the mixing kettle in turn; mix to a uniform and stable aqueous solution; filter with a filter, and then fill it into the designated packaging container.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to novel IGZO (indium gallium zinc oxide) etching liquid for a panel display array process. The novel IGZO etching liquid comprises, in weight percent, 1-10% of sulfuric acid, 0.5-10% of nitric acid, 0.5-10% of acetic acid, 0.1-0.6% of fluoride, 5ppm-1000ppm of surfactants and the balance ultra-pure water. The etching liquid functions in effectively etching novel anti-corrosion IGZO materials, is high in etching rate, small in side etching amount and free from etching residues, and meets mass production process requirements.

Description

technical field [0001] The invention relates to the technical field of flat panel display, in particular to a novel IGZO etchant for a flat panel display array manufacturing process. Background technique [0002] IGZO (indium gallium zinc oxide) is the abbreviation of indium gallium zinc oxide. Amorphous IGZO material is a channel layer material used in the new generation of thin film transistor technology and is a kind of metal oxide (Oxied) panel technology. There is a new type of IGZO material, that is, on the basis of traditional IGZO, the fourth metal element Sn (tin) is added, and the IGZO with the new element is baked at a high temperature above 400°C, with superior performance and greatly improved corrosion resistance. It can increase the application range of IGZO and prolong the service life; for this kind of special new material, there is no special etching solution at present. [0003] The patent with the publication number CN 108265296 A provides an etching solu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08H01L21/306
CPCC09K13/08H01L21/30604
Inventor 王润杰李华平郑李辉卢洪庆陈文波
Owner SUZHOU BOYANG CHEM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap