Dry etching reaction device and gas nozzle for dry etching reaction

Abstract

The invention discloses a dry etching reaction device and a gas nozzle for dry etching reaction. The dry etching reaction device comprises a reaction cavity; a gas pipeline arranged in the reaction cavity; and the gas nozzle, which comprises a gas inlet, a gas channel and at least two gas outlets, which are communicated in sequence. The gas inlet is communicated with the gas channel; and the gas output directions of the at least two gas outlets are not vertical with each other. Through the mode above, the dry etching reaction device and the gas nozzle for dry etching reaction can control uniformity of reaction gas in the reaction cavity, and improve uniformity of gas ions in the etching process to enable dry etching to be more uniform and to achieve an etching rate control purpose.

Description

technical field [0001] The invention relates to the field of dry etching, in particular to a dry etching reaction device and a gas nozzle used for the dry etching reaction. Background technique [0002] Silicon compounds are important and indispensable materials in the field of semiconductors. In particular, semiconductor devices such as transistors included in DRAM (Dynamic Random Access Memory, Dynamic Random Access Memory) flash memory have become more and more integrated, and silicon compounds have attracted more and more attention. [0003] Generally, in semiconductor manufacturing processes, silicon and silicon compounds are processed by dry etching. At present, in the process of etching silicon and silicon compounds, the requirements for etching rate are very high. Among them, the etching rate of the metal process is difficult to control, and it is difficult to optimize the etching rate of the metal process through general methods such as changing the proportion of ...

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Problems solved by technology

Among them, the etching rate of the metal process is difficult to control, and it is difficult to optimize the etching rate of the metal process by general methods such as changing the proportion of etching gas and adjusting the flow rate of etching gas.

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