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An atomic layer deposition apparatus and method

A technology of atomic layer deposition and equipment, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., to achieve the effect of improving film purity, prolonging maintenance cycle and improving quality

Active Publication Date: 2019-12-03
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the ALD system, the blind end of the gas path and the block, and the measurement (gauge) branch are all risk points where the source vapor stagnates or even condenses to form particles, and it is difficult to completely remove the residual source by ordinary purging

Method used

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  • An atomic layer deposition apparatus and method
  • An atomic layer deposition apparatus and method
  • An atomic layer deposition apparatus and method

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Embodiment Construction

[0046] The present invention will be described in more detail below with reference to the accompanying drawings. Although preferred embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0047] figure 2 A structural diagram of an atomic layer deposition apparatus according to an exemplary embodiment of the present invention is shown. The equipment mainly includes: reaction chamber, solvent flushing system and multiple precursor delivery systems. For simplicity, figure 2 Only one of the precursor delivery systems is shown, and other precursor delivery systems are not shown in the figure, and their structures are similar to those shown.

[0048] Such as figure 2...

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Abstract

The invention discloses an atomic layer deposition apparatus and an atomic layer deposition method. The apparatus comprises a reaction chamber, a solvent scouring system and a plurality of precursortransmission systems, each precursor transmission system comprises a precursor transmission pipeline and a precursor source bottle which is connected with the precursor transmission pipeline in an on-off manner, and each precursor transmission pipeline is connected to the reaction chamber; the solvent scouring system comprises a solvent transmission pipeline and a solvent source bottle which is connected with the solvent transmission pipeline in an on-off manner, and the solvent transmission pipeline is selectively communicated with the precursor transmission pipeline in each precursor transmission system so as to introduce a purging solvent into the precursor transmission pipeline and / or the reaction chamber for purging. By additionally arranging the solvent scouring system, residues inthe precursor transmission pipeline and unexpected reactant deposition in the chamber can be effectively removed, the purity of the thin film can be improved, the quality of the deposited thin film can be improved, the maintenance period of the chamber and a pump can be prolonged, and the service life of the pipeline, the chamber and the pump can be prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to an atomic layer deposition device and method. Background technique [0002] With the development of the integrated circuit industry, the feature size of components is gradually reduced and the aspect ratio is gradually increased. Traditional chemical or physical vapor deposition processes are facing severe challenges when depositing conformal films on substrates with high aspect ratios. . [0003] Atomic layer deposition (ALD) is a new thin film deposition method to meet this challenge. Atomic layer deposition is achieved by independently feeding the reaction precursor into the reactor, and the reaction is realized through the catalysis of the substrate surface. ALD reactions are self-limiting reactions, that is, half reactions of ALD proceed until the available reaction sites are consumed, after which there is no more precursor to react. ALD react...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/455
CPCC23C16/45544C23C16/4408Y02P70/50
Inventor 秦海丰史小平李春雷纪红赵雷超张文强
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD