Three-dimensional memory and formation method thereof

A memory, three-dimensional technology, applied in the direction of semiconductor devices, electric solid-state devices, electrical components, etc., can solve the problems of complex three-dimensional memory manufacturing process and high manufacturing cost, reduce the number and the number of etching times, improve the utilization rate, and simplify the manufacturing. The effect of craftsmanship

Active Publication Date: 2019-12-03
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0005] The invention provides a three-dimensional memory and its forming method, which are used to solve the problems of complicated manufacturing process and high manufacturing cost of the existing three-dimensional memory

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  • Three-dimensional memory and formation method thereof
  • Three-dimensional memory and formation method thereof
  • Three-dimensional memory and formation method thereof

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Embodiment Construction

[0040] The specific embodiments of the three-dimensional memory provided by the present invention and the method for forming the same will be described in detail below with reference to the accompanying drawings.

[0041] A three-dimensional memory typically includes a substrate and stacked layers on the substrate, the stacked layers including a core region and a stepped region disposed around the core region. The core area is used for information storage; the stepped area is located at the end of the stack layer, and is used for transmitting control information to the core area, so as to realize the reading and writing of information in the core area.

[0042] The traditional stepped area is a one-way stepped structure. However, as the number of stacked layers in 3D memory continues to increase, the unidirectional stepped structure leads to an increase in the area of ​​the stepped region and a dramatic increase in the manufacturing cost. Based on this, the Staircase Divide S...

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory and a formation method thereof. The formation method of the three-dimensional memory comprises the following steps: providing a substrate, wherein the substrate is provided with a stacked layer, and the stacked layer comprises a core region and a step region distributed around the periphery of the core region; forming a plurality of partition step structure regions in the step region; and forming a plurality of sub-partition structures arranged along a first direction in thepartition step structure regions, wherein the height of a plurality of sub-partition structures gradually changes along the first direction, and the first direction is the direction in which the stepregions point to the core region. The number of mask plates and the times of etching can be reduced so as to simplify the manufacturing process of the three-dimensional memory and reduce the manufacturing cost of the three-dimensional memory.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a three-dimensional memory and a method for forming the same. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered by planar flash memory and pursue lower production costs per unit of memory cells, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or non) flash memory and 3D NAND (3D and not) flash memory. [0003] Among them, 3D NAND memory is based on its small size and large capacity, and the high integration of storage cells using three-dimensional mode layer-by-l...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11578
CPCH10B43/20
Inventor 李治昊夏志良周文犀张帜张中
Owner YANGTZE MEMORY TECH CO LTD
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