A kind of phase change memory with improved yield and preparation method thereof

Abstract

The invention discloses a phase change memory with improved yield, which comprises sequentially arranged: a substrate material layer; a first electrode; an adhesion layer; an insulating dielectric material layer; a phase change material layer; The second electrode; an adhesion layer is added on the bottom electrode, which enhances the adhesion between the insulating dielectric material layer and the bottom electrode, and ensures that the film deposited by the subsequent process is firm; and, after the etching of the insulating dielectric material layer is completed, In the etching process, the over-etching process is adopted, and the contact hole is formed by over-etching the adhesion layer, which not only ensures that the insulating dielectric material layer is etched clean, but also ensures that the subsequent deposited phase-change material layer is in good contact with the bottom electrode. The problem of abnormal short circuit or open circuit is solved, and the device performance and yield are improved.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a phase-change memory with improved yield and a preparation method thereof. Background technique [0002] As a new type of memory, phase-change memory perfectly fills the device gaps in the current memory architecture due to its appropriate storage density, erasing speed and power consumption. Moreover, because the preparation process of phase change memory is highly compatible with the current CMOS, it is one of the best solutions for the next generation memory architecture, and it has huge potential in high density, high speed, low power consumption, embedded applications and special environment applications. commercial potential. [0003] Phase-change memory is mostly a two-terminal device, which involves multiple pattern transfer and film growth processes in the device manufacturing process. Due to the working principle of phase change memory, it is necessary to ...

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Problems solved by technology

[0006] Aiming at at least one of the above defects or improvement needs in the prior art, in particular, how to overcome the defects of low yield and poor reliability of the existing multilayer film structure without affecting the performance and principle of the device, the present invention Provides a phase-change memory with improved yield. An adhesion layer is added on the bottom electrode, which enhances the adhesion between the insulating dielectric material layer and the bottom electrode, and ensures that the film deposited in the subsequent process is firm; moreover, after completing the insulation After the etching of the dielectric material layer, an over-etching process is used in the etching process, and the contact hole is formed by over-etching the adhesion layer, which not only ensures that the insulating dielectric material layer is etched clean, but also ensures that the subsequent deposition of the phase change material The layer is in good contact with the bottom electrode, which overcomes the problem of abnormal short circuit or open circuit, and improves device performance and yield

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