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Method for manufacturing semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, which can solve problems such as dislocation, substrate defects, crystal slip, etc.

Inactive Publication Date: 2003-04-09
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But if this technique is used, the large thermal stress generated in the substrate will cause crystal slip or dislocation
[0010] However, in this conventional technique, since densification by annealing is performed at a low temperature, the inner wall of the trench is oxidized so that a large stress is generated in the trench, thereby causing defects in the substrate

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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Embodiment 2

[0041] 2(a) to 2(f) are sectional views showing successive steps of a method of manufacturing a semiconductor device according to a second embodiment.

[0042] In this manufacturing method, like the method of the first embodiment of FIG. 1, a first silicon nitride film 13 is formed on a sheet substrate 11 through a first thermal oxide film 12 to a thickness of 100 angstroms.

[0043] Then, the first silicon nitride film 13 and the first thermal oxide film 12 are patterned in a desired pattern by photolithography or dry etching. Then, using the first silicon nitride film 13 as a mask, the silicon of the substrate 11 is dry-etched to form a groove 14 of a desired shape. After forming these trenches 14, a second thermal oxide film 11A protecting the trenches 14 is formed on the inner walls of the trenches 14 (FIG. 2(a)).

[0044] A second silicon nitride film 16 is then formed on the substrate 11 by low pressure CVD so as to cover the first silicon nitride film 13 and the second...

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Abstract

In fabrication of a semiconductor device, firstly an isolation trench is formed on a substrate to isolate a plurality of semiconductor elements, and then a thermal oxide film is formed on a sidewall of the trench, whereupon a silicon oxide film is formed on the substrate by chemical vapor deposition. Finally the entire substrate is annealed in a high-pressure ambient.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device having circuit element isolation trenches on a substrate. Background technique [0002] Recently, with the integration of semiconductor devices and the increase in operating speed, various technologies have been remarkably developed for miniaturizing discrete circuit elements loaded on each semiconductor device, and using silicon nitride films for The application of LOCOS (Local Oxidation of Silicon) isolation for electrically isolating discrete circuit components is becoming more and more limited. [0003] Thus, new element isolation techniques using trenches have been developed. For example, Japanese Patent Laid-Open No. sho60-124840 proposes a technique of forming a trench, filling the trench with an insulating film, and annealing at a temperature equal to or lower than the melting point of the...

Claims

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Application Information

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IPC IPC(8): H01L21/76H01L21/316H01L21/324H01L21/762
CPCH01L21/76224H01L21/02052H01L21/02271H01L21/304H01L21/3065H01L21/31051H01L21/324H01L21/76205
Inventor 石川拓
Owner NEC ELECTRONICS CORP