Method for manufacturing gallium nitride substrate using core-shell nanoparticle
A technology of a gallium nitride substrate and a manufacturing method, which is applied in the fields of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the increase in the number and difficulty of processes, damage to gallium nitride, and gallium nitride. Reduced yields and other problems, to achieve the effect of reducing process cost and process time, reducing defect density, and shortening growth time
Active Publication Date: 2019-12-06
IUCF HYU (IND UNIV COOP FOUND HANYANG UNIV)
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[0013] However, in the conventional method, since the etching process is performed after the gallium nitride is grown, the gallium nitride may be damaged due to the excessive etching process, and the number and difficulty of the process increase, resulting in a decrease in the yield of gallium nitride. Decline
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[0067] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings and the contents described in the drawings, but the present invention is not limited or limited to the embodiments.
[0068] The terms used in this specification are for describing the embodiments, not for limiting the present invention. In this specification, a singular form includes a plural form unless otherwise clearly specified in the text. "comprises" and / or "comprising" used in the specification means that there are mentioned structural elements, steps, actions and / or devices, and do not exclude more than one other structural elements, steps, The presence or addition of actions and / or devices.
[0069] The terms "embodiment", "example", "side", "illustration" and the like used in this specification are not necessarily to be construed to mean that any aspect or design described is superior to or has advantages over other aspects or designs.
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Disclosed is a method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure. A method of fabricating a gallium nitride substrate using nanoparticles with a core-shell structure according to an embodiment of the present disclosure includes a step of coating nanoparticles with a core-shell structure on a temporary substrate to form at least one nanoparticle layer; a step of allowing a pit gallium nitride (pit GaN) layer to grow on the temporary substrate; a step of allowing a mirror GaN layer (mirror GaN) to grow on the pit GaN layer; and a step of separatingthe temporary substrate, wherein each of the nanoparticles with a core-shell structure includes a core and an ionic polymer shell applied on a surface of the core surface.
Description
[0001] This application claims priority to US Patent Application No. 15 / 991,464, filed May 29, 2018, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a method of manufacturing gallium nitride substrates utilizing core-shell structured nanoparticles, and in more detail, to the fabrication of high-quality gallium nitride with low defect density by uniformly coating core-shell structured nanoparticles on a temporary substrate Manufacturing method of the substrate. Background technique [0003] The performance and lifetime of semiconductor devices such as laser diodes and light emitting diodes are determined by various factors constituting the respective devices, and in particular, are heavily influenced by the base substrate on which multiple devices are stacked. Various methods for producing high-quality semiconductor substrates are currently proposed. [0004] Typical III-V compound semiconductor sub...
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IPC IPC(8): H01L21/02H01L33/00H01L33/32B82Y30/00
CPCH01L21/02513H01L21/0254H01L33/32H01L33/0075B82Y30/00H01L21/0242H01L21/02458H01L21/02488H01L21/02502H01L21/02639H01L21/02642H01L21/02647H01L21/6835H01L2221/6835H01L2221/68381H01L21/02658H01L21/02634H01L21/0262H01L2221/68345H01L2221/68318H01L21/02601
Inventor 朴在勤沈泰宪沈宰亨金日焕
Owner IUCF HYU (IND UNIV COOP FOUND HANYANG UNIV)