Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems affecting product qualification rate and product defects, so as to avoid product defects, improve product performance, and avoid cracking Effect
Active Publication Date: 2022-03-04
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
However, product defects are prone to occur when directly manufacturing upper-layer functional elements on the integrated circuit, which affects the yield of products
Method used
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[0042] As mentioned in the background art, the topmost interconnection metal (TOP metal TM) in the multilayer metal interconnection structure of some semiconductor devices needs to be patterned (that is, patterned and etched) to be used as an electrode of the upper functional element , when the upper layer functional elements are directly manufactured on the integrated circuit, product defects are prone to occur, which affects the yield of products. Hereinafter, organic light emitting display (OLED, Organic Light Emitting Display) is taken as an example to describe the problems existing in the prior art in detail. OLED display is a thin-film light-emitting device made of organic semiconductor materials and driven by DC voltage. OLED display is different from traditional liquid crystal display (LCD) in that it is a self-luminous display device without backlight and can be made lighter and more Thin, superior in power consumption, and excellent in color realization, response spe...
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The invention provides a method for manufacturing a semiconductor device. Firstly, a side wall with a narrow top and a wide bottom is formed on the side wall of the first electrode, so that the outer side wall of the side wall can be used for buffering, and the covering of the dielectric layer between the subsequent electrodes can be provided. A relatively flat process surface is obtained, thereby preventing the subsequent formation of the inter-electrode dielectric layer and the second electrode from being broken due to the relative step height of the first electrode, avoiding product defects, and improving the product qualification rate. Further, the material of the sidewall is an organic compound and / or amorphous carbon, which can facilitate the formation of the sidewall on the top of the first electrode during the process of etching the covered organic compound and / or amorphous carbon to form the sidewall. The film is released without causing damage to the top surface of the first electrode, ensuring product performance. The present invention also provides a semiconductor device formed by using the manufacturing method of the semiconductor device of the present invention.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the manufacturing process of some semiconductor devices, it is necessary to manufacture integrated circuits on the wafer substrate first. The multilayer metal interconnection structure that is electrically connected to the functional elements of the semiconductor device, and the topmost interconnection metal (TOP metal TM) in the multilayer metal interconnection structure of some semiconductor devices needs to be patterned (that is, patterned and etched) to be used as the upper layer One electrode of the functional element, and then fabricate the functional element of the upper layer on the integrated circuit chip. However, product defects are prone to occur when the upper layer functional elements are directly manufactured on the integrated circuit, which affects...
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IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/82H10K71/00
Inventor 伏广才蒋沙沙
Owner SEMICON MFG INT (SHANGHAI) CORP