Pressure sensor and preparation method of pressure sensor

A pressure sensor and sensor technology, applied in the sensor field, can solve the problems of difficult mass production, high production process requirements, wear and other problems

Inactive Publication Date: 2019-12-20
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a pressure sensor and a preparation method of the pressure sensor to solve the problem that the current common electrode metal sheet has high manufacturing process requirements due to its own material properties (deformation and recovery), and it is difficult to achieve large-scale mass production. The deformation of the common electrode metal sheet will cause wear and tear, which will shorten the life cycle of the sensor

Method used

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  • Pressure sensor and preparation method of pressure sensor
  • Pressure sensor and preparation method of pressure sensor
  • Pressure sensor and preparation method of pressure sensor

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Embodiment 1

[0036] Schematic diagram of a prior art pressure sensor with reference to figure 1 As mentioned above, the working principle of the pressure sensor is C=εS / d (ε is the dielectric constant, S is the area, and d is the distance). When there is external pressure, the deformable metal sheet (common electrode) 11 will be bent to change the phase Changing the distance between the two capacitances formed by the common electrode 11 and the metal plates on both sides of the metal electrode 13, the difference between the two capacitances will occur immediately, and the greater the external pressure, that is, the greater the gas concentration, the greater the difference between the two capacitances. The structural diagram of the pressure sensor in the prior art is as follows: 12 is the electrolyte, 11 is the common electrode (deformable metal sheet), 13 is the metal electrode, g1 and g2 are the distances between the two capacitors, and C1 and C2 are respectively The capacitance formed by...

Embodiment 2

[0059] The embodiment of the present invention discloses a preparation method of a pressure sensor, referring to Figure 6 , the method includes:

[0060] Step 601, providing a first substrate.

[0061] In the embodiment of the present invention, the first substrate may be a glass substrate. When the sensor is a sensor prepared by combining a TFT-LCD manufacturing process with a sensor principle, the first substrate may be a TFT substrate.

[0062] Step 602 , forming a first metal electrode, a second metal electrode, and a first alignment mark on the first substrate.

[0063] In the embodiment of the present invention, a metal layer can be formed on the first substrate by using a film-forming process. Optionally, the material for preparing the metal layer can be one of Mo, Al, and ITO metal. For the The metal layer is exposed to form a preset pattern, and other regions in the metal layer are etched away by an etching process, and the metal in the preset pattern is retained, ...

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Abstract

The invention discloses a pressure sensor and a preparation method of the pressure sensor. The pressure sensor comprises a first substrate and a second substrate, wherein a first electrode and a second electrode which are mutually independent are arranged on the first substrate; a public electrode is arranged on the second substrate; orthographic projection of the first electrode and the orthographic projection of the second electrode on the second substrate both are at least partially overlapped with the orthographic projection of the public electrode on the second substrate; a fluid medium is packaged between the first substrate and the second substrate, the first electrode can form a first capacitor with the fluid medium and the public electrode, the second electrode can form a second capacitor with the fluid medium and the public electrode, and the fluid medium can flow between the first capacitor and the second capacitor under the action of an external force. The sensor provided by the invention cannot generate abrasion of devices, cannot cause a problem of reduction of service life of the devices, meanwhile, devices used for the sensor are simple, so, production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a pressure sensor and a preparation method of the pressure sensor. Background technique [0002] At present, the principle of the capacitive pressure sensor on the market is: use the change principle of d in C=εS / d (ε is the dielectric constant, S is the area, and d is the distance) for production. The current pressure sensor includes the metal sheet of the common electrode and the metal electrodes on both sides. When there is external pressure, the metal sheet of the common electrode bends, which changes the two capacitors C1 and C2 formed by the metal sheet of the common electrode and the metal electrodes on both sides. The distances are d1 and d2. Due to the changes of d1 and d2, the capacitance values ​​of C1 and C2 also change accordingly, thereby generating a capacitance difference and then generating a current. However, due to the current material properties of the common...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L9/12
CPCG01L1/142G01L9/12
Inventor 张鹏曲彭志龙卢凯陈思王威
Owner BOE TECH GRP CO LTD
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