Ion implantation equipment for chip production

Abstract

The invention relates to the technical field of chip production, and discloses an ion implantation device for chip production. A fixed block is fixedly installed at the lower end, and a movable column is slidably connected to the protrusion on the upper surface of the fixed block. Through the cooperation of the ion generator, the fixed plate, the sealing ball, the spray shell, the spray head and the fixed cross bar, the ions in the ion generator can be effectively distributed on both ends of the inside of the spray shell, and the ions can be evenly distributed. The advantage of hitting on the semiconductor ensures that the ions on the semiconductor are distributed as evenly as possible, avoiding the situation that in the traditional spraying process, the sprayed ions are more in the middle and less around the semiconductor.

Description

technical field [0001] The invention relates to the technical field of chip production, in particular to an ion implantation device for chip production. Background technique [0002] In the modern semiconductor manufacturing process, many steps of ion implantation are generally used to manufacture a complete semiconductor device. The most important process parameters of ion implantation are impurity type, implantation energy and dopant dose. The type of impurity refers to which atoms are selected to implant into the silicon substrate. Generally, the types of impurities can be divided into N-type and P-type. N-type mainly includes phosphorus, arsenic, antimony, etc., while P-type mainly includes boron, indium, etc. It determines the depth of implantation of impurity atoms into the silicon crystal, high-energy implantation is deep, and low-energy implantation is shallow. The doping dose refers to the concentration of impurity atoms implanted, which determines the strength of ...

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Problems solved by technology

[0003] When the current chip ion implantation equipment is in use, most of the ion injection head has only one, which will cause the ions ejected through the injection head to be on the semiconductor, showing a situation of more in the middle and less in the periphery, so that the ions hit the semiconductor. The uneven distribution on the surface affects the quality of the semiconductor after the chip is made, and the chip needs to be remade or reprocessed again, which wastes a lot of processing time, as well as the consumption of manpower and material resources, and brings more inconvenience to people.

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