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Susceptor for a CVD reactor

A reactor and pedestal technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve problems such as temperature drop

Active Publication Date: 2019-12-20
AIXTRON AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the substrate is transparent to infrared radiation, this can lead to a temperature drop in the central area of ​​the substrate holder

Method used

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  • Susceptor for a CVD reactor
  • Susceptor for a CVD reactor
  • Susceptor for a CVD reactor

Examples

Experimental program
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Effect test

Embodiment Construction

[0024] Figure 8 The basic structure of the CVD reactor is schematically shown. The reaction chamber is arranged in a reactor housing that is hermetically closed to the outside and is supplied with process gas via a gas inlet 14 . The susceptor 1 heated from below has a plurality of surface segments 3 which each form the bottom of a recess 16 in which a substrate holder 13 is arranged, the upper side of which is directed toward the processing chamber and supports one or more a substrate. A gas cushion is created by feeding flushing gas between the bottom side of the substrate holder 13 and the surface section 3 , on which the substrate holder 13 is suspended. Through the channel 5 arranged helically around the center Z of the surface segment 3 , the incoming gas flow is rotated, the rotation of this gas flow driving the substrate holder 13 in rotation.

[0025] The supply of flushing gas via the supply opening 9 in the central Z region can lead to a generally minor influenc...

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PUM

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Abstract

The invention relates to a susceptor (1) for a CVD reactor, consisting of a flat circular disc-shaped body (1) with channels (5) which are arranged on a broad side (2) in each case within one or morecircular surface sections (3) extending on a respective plane in order to transfer heat to a substrate holder (13), run about a center (Z) in a spiral manner and are formed as depressions that are open towards the plane, and have a respective channel opening (7) in the region of the radially inner channel end (6) with respect to the center (Z) of the circular surface section (3), said channel opening being fluidically connected to a feed opening (9) arranged at the end of a gas supply line (8). Additionally, the surface section (3) is equipped with one or more influencing elements which influence the local heat transfer and are formed as open depressions (10) on said plane or as insert pieces (11) that plug into the depressions (10).

Description

technical field [0001] The invention relates to a base for a CVD (Chemical Vapor Deposition) reactor, which base consists of a planar base body with at least one circular surface section arranged on a broad side, a substrate holder supported on On the surface segment, wherein the surface segment has channels open in the direction of the substrate holder, these channels are in fluid communication with supply openings arranged at the end of the gas supply line. [0002] The invention also relates to the application of a base and a base device composed of a substrate support and a base. Background technique [0003] EP 0 242 898 B1 discloses a CVD reactor in which susceptors are arranged in the reactor housing and can be heated from below by a heating device. The base has a plurality of circular surface segments, on which a substrate holder is respectively arranged, which substrate holder has the shape of a disk. The gas input line opens into the center of the surface segment...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/458C23C16/46
CPCC23C16/4581C23C16/4584C23C16/4586C23C16/46
Inventor O.舍恩F.鲁达威特M.沙夫拉特
Owner AIXTRON AG