Antioxidant Al2O3/TiSiN composite coating and preparation method thereof
A technology of titanium silicon nitride and composite coating, which is applied in the direction of coating, metal material coating process, ion implantation plating, etc., can solve the problems of low deposition temperature, insufficient energy, difficulty in obtaining the use effect, etc., and achieve a firm combination , avoid the effect of low hardness and high toughness
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0026] Put the clean cemented carbide substrate into the vacuum chamber of the plasma-enhanced composite ion coating system, and when the vacuum of the back is evacuated to 0.05Pa, turn on the auxiliary heating device on the furnace wall to heat the substrate, and at the same time turn on the rotating power to make the substrate Rotate continuously, heat until the substrate temperature reaches 380°C; then pass argon gas into the vacuum chamber, adjust the flow rate of argon gas to ensure the pressure is 0.1Pa, and then apply a DC bias of -100V and a pulse bias of -150V to the substrate , using the ionized Ar + Etch the surface of the substrate for 60 minutes; turn off the bias voltage of the substrate in turn, adjust the flow of argon to ensure that the working pressure is 0.2Pa, turn on the main arc power supply of evaporation plating for evaporation coating, the main arc current on the crucible is 200A, and evaporate the raw material for Co 0.2 Ni 0.2 Cr 0.2 al 0.2 Y 0....
Embodiment 2
[0028] Put the clean cermet substrate into the vacuum chamber of the plasma-enhanced compound ion coating system, and when the vacuum on the back is evacuated to 0.04Pa, turn on the auxiliary heating device on the furnace wall to heat the substrate, and turn on the rotating power supply at the same time so that the substrate does not Stop rotating and heat until the temperature of the substrate reaches 380°C; then pass argon gas into the vacuum chamber, adjust the flow rate of argon gas to ensure the pressure is 0.25Pa, and then apply a DC bias voltage of -100V and a pulse bias voltage of -300V to the substrate, Using ionized Ar + Etch the surface of the substrate for 90 minutes; turn off the bias voltage of the substrate in turn, adjust the flow of argon to ensure that the working pressure is 0.15Pa, turn on the main arc power supply of evaporation plating for evaporation coating, the main arc current on the crucible is 220A, and evaporate the raw material for Co 0.2 Ni 0.2...
Embodiment 3
[0030] Put the clean cemented carbide substrate into the vacuum chamber of the plasma-enhanced composite ion coating system, and when the vacuum of the back is evacuated to 0.05Pa, turn on the auxiliary heating device on the furnace wall to heat the substrate, and at the same time turn on the rotating power to make the substrate Rotate continuously, heat until the substrate temperature reaches 380°C; then pass argon gas into the vacuum chamber, adjust the flow rate of argon gas to ensure the pressure is 0.15Pa, and then apply a DC bias of -200V and a pulse bias of -400V to the substrate , using the ionized Ar + Etch the surface of the substrate for 80 minutes; turn off the bias voltage of the substrate in turn, adjust the flow of argon to ensure that the working pressure is 0.2Pa, turn on the main arc power supply of the evaporation plating for evaporation coating, the main arc current on the crucible is 210A, and evaporate the raw material for Co 0.2 Ni 0.2 Cr 0.2 Al 0.2 ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap