Formula of composite texturing liquid additive for preparing fine pyramid single crystal silicon texture

A technology of additives and texturing liquid, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as high carbonate crystallization temperature, easy volatilization of alcohols, and long time of texturing, so as to reduce The effect of reflectivity, no harm to human body and environment, and excellent texturing effect

Active Publication Date: 2020-01-03
HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This new type of chemical called ammonia helps create tiny pits or pyranes on certain surfaces during manufacture of special materials like quartz wafers used in photovoltaic devices (PVs). These minute structures help scatter sunlight better leading to increased energy production from these PVs.

Problems solved by technology

The technical problem addressed in this patented text relates to improving the photosynthetic activity of photochemistry catalysts during the past decade, particularly in order to address issues related to greenhouse gas emission from conventional fossile fuel resources. Current methods involve producing fuels containing less harmful substances like sulfur dioxide and nitrogen oxide, while minimizing the impact upon our planetary ecosystem. However, there remains room for further improvements towards higher productivitation levels without compromising safety concerns associated with burning fossiles.

Method used

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  • Formula of composite texturing liquid additive for preparing fine pyramid single crystal silicon texture
  • Formula of composite texturing liquid additive for preparing fine pyramid single crystal silicon texture
  • Formula of composite texturing liquid additive for preparing fine pyramid single crystal silicon texture

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Take the following steps in the texturing process: 1) Additive preparation: with 1L deionized water as solvent, add 3.0g of imidazolinyl urea, 5.0g of glucose, 12.0g of PEG600, 3.0g of benzoic acid, 2.0g of NaBr and Na 2 SiO 34.0g was fully stirred and dissolved; 2) Preparation of texturing solution: 40.0 mL of NaOH solution with a concentration of 30% by weight was added to 1 L of deionized water, and 15.0 mL of additives were added to obtain an alkaline texturing solution; 3) the cut After the monocrystalline silicon wafer is pre-cleaned, immerse it in the texturing solution, the temperature of the texturing solution is 85°C, and the texturing time is 12 minutes; Wash in water, dry the product in a drying oven to obtain a textured monocrystalline silicon wafer. The size of the pyramids formed on the surface of the monocrystalline silicon wafer is between 0.5-2 μm. The amount of silicon wafers is 3.5%.

Embodiment 2

[0028] Take the following steps in the texturing process: 1) Additive preparation: with 1L deionized water as solvent, add 2-phenylimidazoline 4.0g, fructose 3.0g, PEG800 14.0g, terephthalic acid 4.0g, NaCl 3.0g and Na 2 SiO 3 5.0g was fully stirred and dissolved; 2) preparation of texturing solution: 35.0mL of NaOH solution with a concentration of 30% by weight was added to 1 L of deionized water, and 20.0mL of additives were added to obtain an alkaline texturing solution; 3) the cut After pre-cleaning the monocrystalline silicon wafer, immerse it in the texturing solution, the temperature of the texturing solution is 82°C, and the texturing time is 15 minutes; 4) Clean the monocrystalline silicon wafer after texturing with mixed acid and then use deionized Washing in water, drying the product in a drying oven to obtain a textured monocrystalline silicon wafer.

Embodiment 3

[0030] Take the following steps in the texturing process: 1) Additive preparation: with 1L deionized water as solvent, add 5.0g of 2-benzyl imidazoline, 4.0g of galactose, 10.0g of PEG10000, 2.0g of benzenesulfonic acid, 3.0g of NaI and NaI 2 SiO 3 3.0g was fully stirred and dissolved; 2) preparation of texturing solution: 42.0mL of NaOH solution with a concentration of 30% by weight was added to 1 L of deionized water, and 22.0mL of additives were added to obtain an alkaline texturing solution; 3) the cut After the monocrystalline silicon wafer is pre-cleaned, immerse it in the texturing solution. The temperature of the texturing solution is 87°C, and the texturing time is 10 minutes; Washing in water, drying the product in a drying oven to obtain a textured monocrystalline silicon wafer.

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Abstract

The invention relates to an additive for a single-crystal silicon texturing liquid. The additive comprises the following components: polyvinylpyrrolidone (PVP), a glycol salt, a benzene-containing organic acid salt, sodium silicate and deionized water, wherein the PVP is one or a mixture of two or more selected from the group consisting of PVP-K12, PVP-K15, PVP-K17, PVP-K25, and PVP-K30, and the weight ratio of the PVP to the water is (0.2-1.0):100; the glycol salt includes one or a mixture of two or more selected from the group consisting of diethylene glycol, triethylene glycol, tetraethylene glycol, dipropylene glycol and tripropylene glycol, and the weight ratio of the glycol salt to the water is (1.0-3.0):100; the benzene-containing organic acid salt is one or a mixture of two or moreselected from the group consisting of sodium benzoate, potassium benzoate, sodium phenylacetate, sodium terephthalate and sodium isophthalate, and the weight ratio of the benzene-containing organic acid salt to the water is (0.1-1.0):100; and the weight ratio of the sodium silicate to the water is (0.1-1.0):100. The single-crystal silicon surface texturing agent is prepared by the following formula: 25.0-45.0 mL of a NaOH solution with a concentration of 30% by weight and 10.0-20.0 mL of the additive are added into 1 L of the deionized water.

Description

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Claims

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Application Information

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Owner HUNAN INSTITUTE OF SCIENCE AND TECHNOLOGY
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