Method for cleaning silicon wafer at room temperature

Abstract

The invention discloses a method for cleaning a silicon wafer at room temperature and belongs to the field of semiconductor chip processing and manufacturing. The method comprises steps of mixing ammonium hydroxide, hydrogen peroxide and deionized water according to a volume ratio of 1: 2: 50, and controlling the temperature of the silicon wafer cleaning solution to be room temperature when the silicon wafer is cleaned. After the silicon wafer is cleaned, the silicon wafer with a clean and stain-free surface can be obtained through the spin-drying process. The ammonium hydroxide, the hydrogenperoxide and the deionized water are mixed according to the volume ratio of 1: 2: 50, the use amount of the ammonium hydroxide and the hydrogen peroxide can be effectively reduced, volatilization of chemicals can be greatly weakened when the cleaning agent is utilized at the room temperature, and the cleaning agent can be stored for three days without affecting the cleaning effect of the cleaningagent. The method is advantaged in that the diluted cleaning fluid has significant improvement in safety and health, and production costs are reduced due to reduction in the amount of chemicals used.

Description

technical field [0001] The invention relates to a silicon chip cleaning method, which belongs to the field of semiconductor chip processing and manufacturing. Background technique [0002] As the critical dimensions of silicon wafers continue to shrink, the surface of silicon wafers must be clean before entering each process. Once contaminated, these contaminations must be removed by special cleaning procedures. At present, wet cleaning still occupies the dominant position in the surface cleaning of silicon wafers. The cleaning solutions used in wet cleaning mainly include No. 1 standard cleaning solution (SC-1), No. 2 standard cleaning solution (SC-2), piranha solution ( piranha cleaning solution), DHF, BHF, etc. However, the above cleaning solutions either use a large amount of chemicals to cause high costs, or have major safety hazards. [0003] Standard cleaning solution No. 1 (SC-1) has been widely used since it was proposed by the Radio Corporation of America (RCA) ...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a method for cleaning silicon wafers at room temperature in view of problems such as excessive use of chemicals in the existing silicon wafer cleaning process, resulting in high costs and major safety hazards.

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