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Plasma processing apparatus with post plasma gas injection

A technology of plasma and processing equipment, which is applied in the field of plasma processing equipment utilizing post-plasma gas injection, and can solve problems such as difficulty in adjusting uniformity and the like

Active Publication Date: 2020-01-31
베이징이타운세미컨덕터테크놀로지컴퍼니리미티드 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Uniformity is difficult to tune in a plasma stripping tool without manipulating process parameters such as gas pressure and flow and the RF power supplied to the induction coil used to generate the plasma

Method used

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  • Plasma processing apparatus with post plasma gas injection
  • Plasma processing apparatus with post plasma gas injection
  • Plasma processing apparatus with post plasma gas injection

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Embodiment Construction

[0027] Reference will now be made in detail to embodiments, one or more examples of which are illustrated in the drawings. Each example is provided by way of illustration of the embodiment, not limitation of the disclosure. In fact, it will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments without departing from the scope or spirit of the present disclosure. For example, features illustrated or described as part of one embodiment can be used with another embodiment to yield a still further embodiment. Accordingly, it is intended that aspects of the present disclosure cover such modifications and variations.

[0028] Exemplary aspects of the present disclosure relate to plasma processing apparatus (eg, plasma lift-off tools) and related methods for surface treatment of semiconductor substrates (eg, semiconductor wafers). A plasma processing apparatus may include a plasma chamber in which a plasma is generated usin...

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Abstract

Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma andallow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

Description

[0001] priority [0002] This application claims the benefit of priority to U.S. Provisional Application Serial No. 62 / 517,365, entitled "Plasma Stripping Tool Utilizing Uniformity Control," filed June 9, 2017, which is incorporated by reference for all purposes This article. This application claims the benefit of priority to U.S. Application Serial No. 15 / 851,922, entitled "Plasma Processing Apparatus Utilizing Post-Plasma Gas Injection," filed December 22, 2017, which is incorporated by reference for all purposes into this article. technical field [0003] The present disclosure generally relates to apparatus, systems and methods for processing substrates using plasma sources. Background technique [0004] Plasma processing is widely used in the semiconductor industry for the deposition, etching, resist removal, and related processing of semiconductor wafers and other substrates. Plasma sources (eg, microwave, ECR, induction, etc.) are commonly used in plasma processing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01L21/31138H01J37/32422H01J37/3244H01J37/32715H01L21/67028H01J2237/002B08B7/0035H01L21/02057H01J37/32009
Inventor 马绍铭弗拉迪米尔·纳戈尔尼D·V·德塞瑞安·M·帕库尔斯基
Owner 베이징이타운세미컨덕터테크놀로지컴퍼니리미티드