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Circuits and methods of forming circuits

A technology of integrated circuits and circuits, applied in the direction of circuits, logic circuits, electrical components, etc., can solve problems such as unsuitable gates

Active Publication Date: 2021-12-24
卓思私人有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Nonetheless, one of the main limitations of LEAP technology is its limited protected impact directions, such as Figure 3C shown by the dotted lines 397a, 397b in , and the LEAP technique is only applicable to DICE latches, but not to other gates

Method used

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  • Circuits and methods of forming circuits
  • Circuits and methods of forming circuits
  • Circuits and methods of forming circuits

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Embodiment Construction

[0026] The following detailed description refers to the accompanying drawings, which show, by way of illustration, specific details and embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. The various embodiments are not necessarily mutually exclusive, as some embodiments can be combined with one or more other embodiments to form new embodiments.

[0027] Embodiments described in the context of one of a method or device are similarly valid for the other method or device. Similarly, embodiments described in the context of a method are similarly valid for a device, and vice versa.

[0028] Features described in the context of an embodiment may correspondingly apply to the same or similar features in other embodime...

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Abstract

According to an embodiment of the present invention, a circuit is provided. The circuit includes: forming a first electrical device having a first region of a first conductivity type; forming a second electrical device having a second region of a second conductivity type; and electrically coupling the first region and the second region to each other, Wherein, one of the first area and the second area is arranged to at least substantially surround the other of the first area and the second area. According to other embodiments of the present invention, a method for forming a circuit is also provided.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority from Singapore Patent Application No. 10201704950V filed 5 June 2017, the entire contents of which are hereby incorporated by reference for all purposes. technical field [0003] Various embodiments relate to circuits and methods of forming circuits. Background technique [0004] In space and satellite (S&S) applications, the robustness of integrated circuits (ICs) is one of the most important design considerations. This is because ICs embedded in electronic systems for S&S applications are exposed to every possible radiation impact, potentially compromising the functionality of the IC and, in the worst case, causing permanent and irreparable damage to the IC. Possible radiation effects include total dose ionization (TID) and single event effects (SEE). The former TID is a cumulative effect that may alter transistor characteristics in the IC when the IC is exposed to ra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/003H01L23/552H01L27/06H03K19/094H01L29/78
CPCH01L23/552H01L29/78H03K19/0033H03K19/094H01L29/0692H01L27/0921H01L21/823871H01L23/528H01L27/0207H01L27/0629H01L29/0847H03K19/00338
Inventor 张健学张坤翔林通奈觉专·伦西瓦拉玛克里希南·哈里哈拉克里希南
Owner 卓思私人有限公司