A kind of sapphire small disc processing method

Abstract

The invention provides a method for processing sapphire small discs, which includes the following steps in sequence: A: Preparing an adhesive, B: Bonding treatment, C: Inner circle cutting treatment, D: Rounding rough grinding treatment, E: Centerless grinding Fine grinding, F: Chemical material, G: Cleaning, the binder is rosin and paraffin prepared in a mass ratio of 1.6:1. The present invention can effectively improve the processing yield of sapphire small discs and reduce manufacturing costs. .

Description

Technical field [0001] The invention relates to the technical field of optical lens manufacturing, and in particular, to a method for processing sapphire small discs. Background technique [0002] At present, the processing method of sapphire small discs is mainly laser cutting technology. The sapphire substrate with the required thickness is directly cut into discs or the sapphire substrate is bonded and cut into small squares and then rounded. Laser cutting equipment is not only relatively It is expensive, and laser cutting edges generally have a certain taper, and the cutting problem is even greater when the sapphire substrate is coated; on the other hand, because the hardness of sapphire is very high, the traditional method is to use rosin paraffin wax or refined wax to directly superimpose and bond together before cutting. There is a big problem. Among them, cutting is generally multi-line cutting, outer circle cutting and inner circle cutting. Multi-line cutting is a c...

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Problems solved by technology

[0002] At present, the processing method of small sapphire wafers is mainly laser cutting technology, which directly cuts the sapphire substrate of required thickness into wafers or cuts the sapphire substrate into small square materials after bonding, and then rounds them. Laser cutting equipment is not only relatively Expensive, and the edge of laser cutting generally has a certain degree of taper, and the cutting problem is even greater when the sapphire substrate is coated; on the other hand, due to the very high hardness of sapphire, the traditional method is to use the ratio of rosin paraffin wax or refined wax to be directly superimposed and bonded together before cutting There is a big problem, the cutting is generally multi-wire cutting, outer circle cutting and inner circle cutting, multi-wire cutting is a cutting method with good cutting effect, but as the specifications of sapphire small wafers change, the rollers used also change. It needs to be replaced constantly, and the cost of cutting sapphire wire is relatively high, resulting in high cost of this cutting method; outer circular cutting has a relatively large knife slit, which greatly affects the utilization rate of the substrate; internal circular cutting is a kind of It is a relatively low-cost cutting method, but it is easy to scatter the bonded sapphire during external or internal cutting, resulting in the impossibility of rounding in the subsequent process, and the low cost of yield will also increase.

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