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Plasma treatment apparatus

A processing device and plasma technology, applied in the directions of plasma, discharge tubes, electrical components, etc., can solve the problems of damage to the yield of semiconductor devices and increase of circuit performance, so as to suppress the unevenness of the electric field, reduce the deviation of processing, The effect of improving the yield

Pending Publication Date: 2020-02-07
HITACHI HIGH-TECH CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there may be a large difference in the performance of the circuit obtained from the etching process, and one of the performances may fall outside the allowable range.
As a result, there has been a problem that the yield of manufacturing semiconductor devices will be impaired.

Method used

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Embodiment Construction

[0022] Below, use Figure 1 ~ Figure 3 A plasma processing apparatus according to one embodiment of the present invention will be described.

[0023] [Plasma treatment device (1)]

[0024] figure 1 It is a vertical cross-sectional view schematically showing the outline of the structure of the plasma processing apparatus 1 according to one embodiment of the present invention. In addition, the X direction, the Y direction, and the Z direction are used for description. The Z direction is a vertical direction and is a direction of a central axis of a shape such as a cylinder. The X direction and the Y direction are two directions constituting a horizontal plane perpendicular to the Z direction, a surface such as a wafer, and correspond to radial directions. exist figure 1 , shows a cross section centered on the central axis of the dot-dash line in the Z direction.

[0025] In the plasma processing apparatus 1 of the present embodiment, a configuration example related to a mi...

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Abstract

The present invention provides a technology with which it is possible to reduce treatment variation in the in-plane direction of a sample and to improve yield of the treatment. This plasma treatment apparatus (1) is provided with: a first electrode (base material (110B)) disposed within a sample stage (110); a ring-shaped second electrode (conductor ring (114)) disposed so as to surround the outerperipheral side of an upper face portion (310) (dielectric film portion (110A)) of the sample stage (110); a ring-shaped member (susceptor ring (113)) which is made of a dielectric material and whichis disposed so as to cover the second electrode and to surround the outer periphery of the upper face portion (310); a plurality of power-feeding paths for supplying high-frequency power from a high-frequency power source to the first and second electrodes; and a matching device (117) disposed on the power-feeding path to the second electrode. In addition, a grounding location and a first location (A1), which is between the matching device (117) on the power-feeding path to the second electrode and the second electrode, are electrically connected via a resistor (118) configured to have a prescribed value.

Description

technical field [0001] The present invention relates to the technology of plasma processing equipment. In addition, the present invention relates to processing a substrate-shaped sample such as a semiconductor wafer or the like placed on a sample stage installed in a processing chamber in a vacuum vessel by using plasma, and performing processing by supplying high-frequency power to the sample stage. technology. Background technique [0002] In the process of manufacturing a semiconductor device, a process of laminating a plurality of films including a mask layer formed in advance on the upper surface of a sample such as a semiconductor wafer and a film layer to be processed is widely performed. The structure is etched based on the mask layer to form a circuit structure. In such an etching process, generally, a plasma processing apparatus is used that processes a sample placed in a processing chamber in a vacuum vessel using plasma formed in the processing chamber. [000...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065
CPCH01L21/67H01J37/32H01J37/32577H01J37/32238H01J37/32541H01J37/32311H01J37/32201H01J37/32183H01J37/32715H01L21/67069H01L21/3065H01J2237/334H05H1/46
Inventor 近藤勇树横川贤悦森政士宇根聪中本和则
Owner HITACHI HIGH-TECH CORP
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