Physical Vapor Deposition Equipment for Improved Film Uniformity

Abstract

The invention provides a physical vapor deposition device for improving the uniformity of a thin film. The device includes a cavity, a deposition source device and a heating device. The deposition source device is located at the upper portion of the cavity, and the heating device is located at the lower portion of the cavity. The heating device includes a wafer carrier layer, a heating layer and amagnetic field adjustment layer which are stacked up and down, the heating layer includes a plurality of heating regions, the plurality of heating regions are used for realizing a plurality of different heating temperatures, and the magnetic field adjustment layer is used for improving the stress uniformity of the deposited thin film. By means of the physical vapor deposition device, the structural design is improved, partition temperature control over the multiple heating regions is carried out, and therefore different process temperatures can be set according to the process requirements ofdifferent regions of the wafer surface, magnetic fields of the magnetic field adjustment layer can achieve further adjustment on the stress uniformity of the deposited thin film, the resistance uniformity and the stress uniformity of the deposited thin film are better improved, the quality of the deposited thin film is improved, and the production yield is increased.

Description

technical field [0001] The invention relates to semiconductor manufacturing equipment, in particular to a physical vapor deposition equipment for improving film uniformity. Background technique [0002] The physical vapor deposition process is a very important process in the semiconductor chip manufacturing process. It produces particles such as metals through evaporation, ionization or sputtering, and reacts with reactive gases to finally deposit and form a thin film on the surface of the wafer. Various parameters in the physical vapor deposition process, including gas flow, RF power, process temperature, etc., may have an important impact on the quality of the final film, and the impact of temperature is particularly prominent. Temperature differences not only cause differences in the properties of deposited films on different wafer surfaces, but also have a great influence on the film properties such as the square resistance uniformity and stress uniformity of physical va...

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Problems solved by technology

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a physical vapor deposition equipment that improves the uniformity of the film, which is used to solve the problem of depositing films in the prior art because the heating device is single-zone heating. Resistance uniformity and stress uniformity are not good, leading to problems such as production yield decline

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